MTD6N20E Power MOSFET 6 A, 200 V, NChannel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching MTD6N20E ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage V (BR)DSS 200 Vdc (V = 0 Vdc, I = 0.25 Adc) GS D 689 mV/C Temperature Coefficient (Positive) Zero Gate Voltage Drain Current I Adc DSS 10 (V = 200 Vdc, V = 0 Vdc) DS GS 100 (V = 200 Vdc, V = 0 Vdc, T = 125C) DS GS J GateBody Leakage Current (V = 20 Vdc, V = 0) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) 2.0 3.0 4.0 Vdc (V = V , I = 250 Adc) DS GS D 7.1 mV/C Temperature Coefficient (Negative) Static DrainSource OnResistance (V = 10 Vdc, I = 3.0 Adc) R 0.46 0.700 Ohm GS D DS(on) DrainSource OnVoltage (V = 10 Vdc) V Vdc GS DS(on) 2.9 5.0 (I = 6.0 Adc) D 4.4 (I = 3.0 Adc, T = 125C) D J Forward Transconductance (V = 15 Vdc, I = 3.0 Adc) g 1.5 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 342 480 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 92 130 oss f = 1.0 MHz) Reverse Transfer Capacitance C 27 55 rss SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 8.8 17.6 ns d(on) (V = 100 Vdc, I = 6.0 Adc, Rise Time DD D t 29 58 r V = 10 Vdc, GS Turn Off Delay Time t 22 44 R = 9.1 ) d(off) G Fall Time t 20 40.8 f Gate Charge Q 13.7 21 nC T (See Figure 8) Q 2.7 1 (V = 160 Vdc, I = 6.0 Adc, DS D V = 10 Vdc) GS Q 7.1 2 Q 5.9 3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (Note 3) (I = 6.0 Adc, V = 0 Vdc) V Vdc S GS SD (I = 6.0 Adc, V = 0 Vdc, 0.99 1.2 S GS T = 125C) 0.9 J Reverse Recovery Time t 138 ns rr (See Figure 14) t 93 a (I = 6.0 Adc, V = 0 Vdc, S GS dI /dt = 100 A/ s) S t 45 b Reverse Recovery Stored Charge Q 0.74 C RR INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance L 4.5 nH D (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance L 7.5 nH S (Measured from the source lead 0.25 from package to source bond pad) 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperature.