X-On Electronics has gained recognition as a prominent supplier of FDT86113LZ MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDT86113LZ MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDT86113LZ ON Semiconductor

FDT86113LZ electronic component of ON Semiconductor
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See Product Specifications
Part No.FDT86113LZ
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 100V N-Channel PowerTrench MOSFET
Datasheet: FDT86113LZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.4333 ea
Line Total: USD 433.3 
Availability - 7760
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
7760
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.4333
4000 : USD 0.4249
8000 : USD 0.4185
12000 : USD 0.4085
16000 : USD 0.4024
28000 : USD 0.3964

7760
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 4000
Multiples : 4000
4000 : USD 0.4355
8000 : USD 0.4355
12000 : USD 0.4355

3137
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 1.442
5 : USD 1.0304
26 : USD 0.6692
71 : USD 0.6328
250 : USD 0.6146

7760
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.5858
4000 : USD 0.5745
8000 : USD 0.5657
12000 : USD 0.5523
16000 : USD 0.5441

   
Manufacturer
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RoHS - XON
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Drain-Source Breakdown Voltage
Forward Transconductance - Min
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We are delighted to provide the FDT86113LZ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDT86113LZ and other electronic components in the MOSFETs category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDT86113LZ N-Channel PowerTrench MOSFET March 2011 FDT86113LZ N-Channel PowerTrench MOSFET 100 V, 3.3 A, 100 m Features General Description This N-Channel logic Level MOSFETs are produced using Max r = 100 m at V = 10 V, I = 3.3 A DS(on) GS D Fairchild Semiconductors advanced Power Trench process Max r = 145 m at V = 4.5 V, I = 2.7 A DS(on) GS D that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener High performance trench technology for extremely low r DS(on) has been added to enhance ESD voltage level. High power and current handling capability in a widely used surface mount package Application HBM ESD protection level > 3 KV typical (Note 4) DC - DC Switch 100% UIL tested RoHS Compliant D S D G SOT-223 MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous 3.3 I A D -Pulsed 12 E Single Pulse Avalanche Energy (Note 3) 9 mJ AS Power Dissipation T = 25 C (Note 1a) 2.2 A P W D Power Dissipation T = 25 C (Note 1b) 1.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 12 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 55 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 86113LZ FDT86113LZ SOT-223 13 12 mm 2500 units 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDT86113LZ Rev.C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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