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V = 10 V, I = 2.75 A UniFET II MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 13 nC) technology. This advanced MOSFET family has the smallest on- Low C (Typ. 7 pF) rss state resistance among the planar MOSFET, and also provides 100% Avalanche Tested superior switching performance and higher avalanche energy Improved dv/dt Capability strength. In addition, internal gate-source ESD diode allows TM UniFET II MOSFET to withstand over 2kV HBM surge stress. ESD Improved Capability This device family is suitable for switching power converter appli- RoHS Compliant cations such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Applications Lighting Uninterruptible Power Supply D D G S I-PAK G D-PAK G D S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C FDD7N60NZTM/ Symbol Parameter Unit FDU7N60NZTU V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 25 V GSS o - Continuous (T = 25 C) 5.5 C I Drain Current A D o - Continuous (T = 100 C) 3.3 C I Drain Current - Pulsed (Note 1) 22 A DM E Single Pulsed Avalanche Energy (Note 2) 347 mJ AS I Avalanche Current (Note 1) 5.5 A AR E Repetitive Avalanche Energy (Note 1) 12.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns o (T = 25 C) 90 W C P Power Dissipation D o o - Derate Above 25C0.7W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Thermal Characteristics FDD7N60NZTM/ Symbol Parameter Unit FDU7N60NZTU R Thermal Resistance, Junction to Case, Max. 1.4 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 90 JA 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDD7N60NZ / FDU7N60NZTU Rev. C1