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FDY4000CZ Complementary N & P-Channel PowerTrench MOSFET November 2009 FDY4000CZ Complementary N & P-Channel PowerTrench MOSFET Features General Description Q1: N-Channel This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Max r 0.7 at V = 4.5V, I = 600mA DS(on) GS D Trench process to optimize the r V = 2.5V and DS(ON) GS Max r 0.85 at V = 2.5V, I = 500mA DS(on) GS D specify the r V = 1.8V. DS(ON) GS Max r 1.25 at V = 1.8V, I =150 mA DS(on) GS D Applications Q2: P-Channel Level shifting Max r 1.2 at V = -4.5V, I = -350mA DS(on) GS D Power Supply Converter Circuits Max r 1.6 at V = -2.5V, I = -300mA DS(on) GS D Max r 2.7 at V = -1.8V, I = -150mA DS(on) GS D Load/Power Switching Cell Phones, Pagers ESD protection diode (note 3) RoHS Compliant 6 5 S2 4 3 D2 4 G2 5 2 G1 1 D1 6 1 S1 2 3 MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 20 -20 V DS V Gate to Source Voltage 12 8 V GS Drain Current -Continuous (Note 1a) 600 -350 I mA D -Pulsed 1000 -1000 625 Power Dissipation (Steady State) (Note 1a) P mW D (Note 1b) 446 T , T Operating and Storage Jaunting Temperature Range -55 to 150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 200 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 280 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity E FDY4000CZ SC89-6 7 8mm 3000units 2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDY4000CZ Rev. B2