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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDD3N40 / FDU3N40 N-Channel UniFET MOSFET November 2013 FDD3N40 / FDU3N40 TM N-Channel UniFET MOSFET 400 V, 2 A, 3.4 Features Description TM UniFET MOSFET is Fairchild Semiconductors high voltage R = 3.4 (Typ.) V = 10 V, I = 1 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 4.5 nC) This MOSFET is tailored to reduce on-state resistance, and to Low C (Typ. 3.7 pF) provide better switching performance and higher avalanche rss energy strength. This device family is suitable for switching 100% Avalanche Tested power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic Applications lamp ballasts. LED TV Consumer Appliances Lighting Uninterruptible Power Supply D D G S I-PAK D-PAK G G D S S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FDD3N40TM / FDU3N40TU Unit V Drain-Source Voltage 400 V DSS I Drain Current - Continuous (T = 25C) A 2.0 D C - Continuous (T = 100C) A 1.25 C (Note 1) I Drain Current - Pulsed 8.0 A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 46 mJ AS (Note 1) I Avalanche Current 2A AR (Note 1) E Repetitive Avalanche Energy 3mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 30 W D C - Derate Above 25C 0.24 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics Symbol Parameter FDD3N40TM / FDU3N40TU Unit R Thermal Resistance, Junction-to-Case, Max. 4.2 C/W JC R Thermal Resistance, Junction to Ambient, Max. 110 C/W JA 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDD3N40 / FDU3N40 Rev. C3