FDU3N50NZTU N-Channel UniFET II MOSFET 500 V, 2.5 A, 2.5 UniFET II MOSFET is ON Semiconductors high voltage www.onsemi.com MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest onstate resistance among the planar MOSFET, and also provides superior D switching performance and higher avalanche energy strength. In addition, internal gatesource ESD diode allows UniFET II MOSFET to withstand over 2 kV HBM surge stress. This device family is suitable for switching power converter applications such as power G factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. S Features R = 2.1 (Typ.) V = 10 V, I = 1.25 A DS(on) GS D Low Gate Charge (Typ. 6.2 nC) Low C (Typ. 2.5 pF) rss 100% Avalanche Tested Improved dv/dt Capability ESD Improved Capability These Devices are PbFree and are RoHS Compliant IPAK3 Applications CASE 369AR LCD / LED TV Lighting Charger / Adapter ORDERING INFORMATION See detailed ordering, marking and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: May, 2019 Rev. 0 FDU3N50NZTU/DFDU3N50NZTU ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V DraintoSource Voltage 500 V DSS V GatetoSource Voltage 25 V GSS I Drain Current Continuous (T = 25C) 2.5 A D C Continuous (T = 100C) 1.5 C I Drain Current Pulsed (Note 1) 10 A DM E Single Pulse Avalanche Energy (Note 2) 114 mJ AS I Avalanche Current (Note 1) 2.5 A AR E Repetitive Avalanche Energy (Note 1) 4 mJ AR dv/dt Peak Diode Recovery (Note 3) 10 V/ns P Power Dissipation T = 25C 40 W D C Derate Above 25C 0.3 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering Purposes (1/8 from case for 5 seconds) 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. L = 36.6 mH, I = 2.5 A, V = 50 V, R = 25 , starting T = 25C. AS DD G J 3. I 2.5 A, di/dt 200 A/s, V BV , starting T = 25C. SD DD DSS J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, JunctiontoCase, Max. 3.1 C/W JC R Thermal Resistance, JunctiontoAmbient, Max. 90 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDU3N50NZTU FDU3N50NZ IPAK Tube N/A N/A 75 units www.onsemi.com 2