DMGD7N45SSD
450V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
I Low Input Capacitance
D
V R
(BR)DSS DS(ON) MAX
T = +25C High BVDss Rating for Power Application
A
450V 0.85A Low Input/Output Leakage
4 @ V = 10V
GS
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description
Qualified to AEC-Q101 Standards for High Reliability
This new generation complementary MOSFET features low on-
resistance and fast switching, making it ideal for high efficiency power
Mechanical Data
management applications.
Case: SO-8
Case Material: Molded Plastic, Green Molding Compound. UL
Applications
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Motor Control
Terminals Connections: See diagram below
Backlighting
Terminals: Finish - Matte Tin annealed over Copper lead frame.
DC-DC Converters
e3
Solderable per MIL-STD-202, Method 208
Power Management Functions
Weight: 0.074 grams (approximate)
D1 D2
S1 D1
D1
G1
S2 D2
G2
G1
G2 D2
S1 S2
Top View
Equivalent Circuit
Pin Configuration
Top View
Ordering Information (Note 4)
Part Number Compliance Case Packaging
DMGD7N45SSD-13 Standard SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMGD7N45SSD
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V 450 V
DSS
Gate-Source Voltage V 30 V
GSS
Steady State 0.5
A
Continuous Drain Current (Note 5) V = 10V t < 10s I 0.62
GS D
t < 1s 0.85 A
Pulsed Drain Current (10s pulse, duty cycle = 1%) I 2.2 A
DM
Maximum Body Diode Forward Current (Note 5) I 1.7 A
S
L = 60mH 1.4
Avalanche Current (Note 6) A
I
AS
L = 10mH (Note 8) 2.2
L = 60mH 56
Avalanche Energy (Note 6) E mJ
AS
L = 10mH (Note 8) 25
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P 1.64 W
D
Steady state 78 C/W
Thermal Resistance, Junction to Ambient (Note 5)
R
JA
t<10s 20.2 C/W
Thermal Resistance, Junction to Case (Note 5) R 13.3 C/W
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 450 V V = 0V, I = 10mA
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 450V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 30V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 3.5 4.5 V V =10V I = 1mA
GS(th) DS D
Static Drain-Source On-Resistance R 3 4 V = 10V, I = 0.4A
DS (ON) GS D
Forward Transfer Admittance |Y | 0.55 1.1 S V = 10V, I =0.4A
fs DS D
Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 0.7A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance 256
C
iss
V = 25V, V = 0V
DS GS
Output Capacitance 22.5 pF
C
oss
f = 1MHz
Reverse Transfer Capacitance 0.83
C
rss
Gate Resistance 2.3
R V = 0V, V = 0V, f = 1MHz
G DS GS
Total Gate Charge (V = 10V) Q 6.9
GS g
Gate-Source Charge Q 1.4 nC V = 360V,I = 0.7A, V = 10V
gs DS D GS
Gate-Drain Charge Q 3.4
gd
Turn-On Delay Time t 7
D(on)
Turn-On Rise Time t 6.4
r V = 10V, R = 562 , R = 10 ,
GS L G
nS
Turn-Off Delay Time t 18.9 I = 0.4A
D(off) D
Turn-Off Fall Time 56.6
t
f
Body Diode Reverse Recovery Time 103 nS
t
rr
I = 1A, dI/dt = 100A/s
F
Body Diode Reverse Recovery Charge 314 nC
Q
rr
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. I and E rating are based on low frequency and duty cycles to keep T = +25C.
AR AR J
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 7 February 2014
DMGD7N45SSD
Diodes Incorporated
www.diodes.com
Document number: DS36011 Rev. 7 - 2
NEW PRODUCT