Green DMTH8012LPSW 80V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (SWP) (Type Q) Product Summary Features I Rated to +175C Ideal for High Ambient Temperature D BV R DSS DS(ON) T = +25C Environments C 17m V = 10V 53.7A GS 100% Unclamped Inductive Switching Ensures More Reliable 80V 23.5m V = 4.5V 44.3A GS and Robust End Application High Conversion Efficiency Low RDS(ON) Minimizes On State Losses Low Input Capacitance Fast Switching Speed Description and Applications Additional Tin-plated on Sidewall Pads for Optical Solder This MOSFET is designed to minimize the on-state resistance Inspection (R ) and yet maintain superior switching performance, making it DS(ON) Lead-Free Finish RoHS Compliant (Notes 1 & 2) ideal for high efficiency power management applications. Halogen and Antimony Free. Green Device (Note 3) Synchronous Rectifier Qualified to AEC-Q101 Standards for High Reliability Backlighting Power Management Functions Mechanical Data DC-DC Converters Case: PowerDI 5060-8 (SWP) (Type Q) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 (SWP) (Type Q) S D S D Pin1 S D D G Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMTH8012LPSW-13 PowerDI5060-8 (SWP) (Type Q) 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH8012LPSW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 80 V DSS Gate-Source Voltage V 20 V GSS T = +25C 10.3 A Continuous Drain Current, V = 10V (Note 5) I A GS D 7.3 T = +100C A T = +25C 53.7 C A Continuous Drain Current, V = 10V (Note 6) I GS D 38 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 80 A DM Maximum Continuous Body Diode Forward Current (Note 6) I 69 A S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I 80 A SM Avalanche Current, L=0.1mH I 11.6 A AS Avalanche Energy, L=0.1mH 6.7 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 3.1 W A D Thermal Resistance, Junction to Ambient (Note 5) 49 C/W R JA Total Power Dissipation (Note 6) 83.3 W T = +25C P C D Thermal Resistance, Junction to Case (Note 6) 1.8 C/W R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 80 - - V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I - - 1 A V = 64V, V = 0V DSS DS GS Gate-Source Leakage I - - 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1 - 3 V V V = V , I = 250A GS(TH) DS GS D - 14 17 V = 10V, I = 12A GS D Static Drain-Source On-Resistance m R DS(ON) - 16.5 23.5 V = 4.5V, I = 6A GS D Diode Forward Voltage - 0.9 1.2 V V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance - 1949 - C iss V = 40V, V = 0V, DS GS Output Capacitance - 177 - pF C oss f = 1MHz Reverse Transfer Capacitance - 10 - C rss Gate Resistance R - 0.7 - V = 0V, V = 0V, f = 1MHz g DS GS - 15 - Total Gate Charge (V = 4.5V) Q GS g - 34 - Total Gate Charge (V = 10V) Q GS g nC V = 40V, I = 12A DS D Gate-Source Charge - 6 - Q gs Gate-Drain Charge - 4.5 - Q gd Turn-On Delay Time t - 4.9 - D(ON) Turn-On Rise Time t - 3.8 - R V = 40V, V = 10V, DD GS ns Turn-Off Delay Time t - 16.5 - I = 12A, R = 1.6 D(OFF) D g Turn-Off Fall Time t - 3.5 - F Body Diode Reverse Recovery Time t - 30.2 - ns RR I = 12A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 34.6 - nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH8012LPSW June 2017 Diodes Incorporated www.diodes.com Document number: DS39023 Rev.2 - 2