Green DMNH6012LK3Q Q 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature I Max D BV R Max DSS DS(ON) T = +25C Environments C 80A 12m V = 10V 100% Unclamped Inductive Switching Ensures more Reliable GS 60V 70A 18m V = 4.5V GS and Robust End Application Low On-Resistance Low Input Capacitance Description and Applications Lead-Free Finish RoHS Compliant (Notes 1 & 2) This MOSFET is designed to meet the stringent requirements of Halogen and Antimony Free. Green Device (Note 3) Automotive applications. It is qualified to AECQ101, supported by a Qualified to AEC-Q101 Standards for High Reliability PPAP and is ideal for use in: PPAP Capable (Note 4) Engine Management Systems Body Control Electronics Mechanical Data DC/DC Converters Case: TO252 (DPAK) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Matte Tin Finish Annealed over Copper e3 leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) Equivalent Circuit Top View Pin Out Top View Ordering Information (Note 5) Part Number Case Packaging DMNH6012LK3Q-13 TO252 (DPAK) 2500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMNH6012LK3Q Q Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 80 C A Continuous Drain Current (Note 8), V = 10V I GS D 60 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 120 A I DM Maximum Continuous Body Diode Forward Current (Note 8) 80 A I S Avalanche Current, L = 0.1mH (Note 9) 45 A I AS Avalanche Energy, L = 0.1mH (Note 9) E 100 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 2.0 W P D Thermal Resistance, Junction to Ambient (Note 6) Steady State 74 C/W R JA Total Power Dissipation (Note 7) P 3.8 W D Steady State Thermal Resistance, Junction to Ambient (Note 7) 40 R JA C/W Thermal Resistance, Junction to Case (Note 8) 1.2 R JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250A DSS GS D 1 A Zero Gate Voltage Drain Current, T = +25C I V = 60V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 10) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(TH) DS GS D 8 12 V = 10V, I = 25A GS D Static Drain-Source On-Resistance m R DS(ON) 10 18 V = 4.5V, I = 25A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1.7A SD GS S DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance C 1926 pF iss V = 30V, V = 0V, DS GS Output Capacitance C 330 pF oss f = 1MHz Reverse Transfer Capacitance C 112 pF rss Gate Resistance R V = 0V, V = 0V, f = 1MHz g 2.0 DS GS nC Total Gate Charge (VGS = 4.5V) Qg 16.3 nC Total Gate Charge (V = 10V) Q 35.2 GS g V = 30V, I = 25A DS D Gate-Source Charge nC Q 7.6 gs Gate-Drain Charge nC Q 6.9 gd Turn-On Delay Time ns t 6.4 D(ON) Turn-On Rise Time t 11.9 ns V = 10V, V = 30V, R GS DS Turn-Off Delay Time t 16.5 ns R = 3, I = 25A D(OFF) g D Turn-Off Fall Time t 5 ns F Body Diode Reverse Recovery Time t 28 ns I = 25A, di/dt = 100A/s RR F Body Diode Reverse Recovery Charge Q 23 nC I = 25A, di/dt = 100A/s RR F Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. 2 of 7 DMNH6012LK3Q June 2016 Diodes Incorporated www.diodes.com Document number: DS37431 Rev. 1 - 2