DMNH4026SSDQ
40V 175C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
Rated to +175C Ideal for High Ambient Temperature
I
D
BV R
DSS DS(ON) MAX
Environments
T = +25C
A
100% Unclamped Inductive Switching Ensures More Reliable
7.5A
24m @V = 10V
GS
40V
And Robust End Application
32m @V = 4.5V 6.5A
GS
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description and Applications
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Mechanical Data
Motor Control Case: SO-8
Backlighting Case Material: Molded Plastic,Gree Molding Compound.
Power Management Functions UL Flammability Classification Rating 94V-0
DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram Below
Terminals: Finish Matte Tin Annealed Over Copper Lead
Frame. Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
D 2
D1
SO-8
S1 D1
G1 D1
Pin1
G2
S2 D2 G1
G2 D2
S2
Top View S1
Top View
Internal Schematic
Equivalent Circuit
Ordering Information (Note 5)
Part Number Case Packaging
DMNH4026SSDQ-13 SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMNH4026SSDQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 40 V
DSS
Gate-Source Voltage V 20 V
GSS
Steady T A = +2 5 C 7.5
Continuous Drain Current (Note 7) V = 10V I A
GS D
State 5.3
T = +100C
A
Maximum Continuous Body Diode Forward Current (Note 7) 2.5 A
I
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 60 A
DM
Avalanche Current (Note 8) L = 0.1mH I 18 A
AS
Avalanche Energy (Note 8) L = 0.1mH E 18 mJ
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) 1.5 W
T = +25C P
A D
Steady State 101
Thermal Resistance, Junction to Ambient (Note 6) C/W
RJA
t<10s 59
Total Power Dissipation (Note 7) 2.0 W
T = +25C P
A D
Steady State 74
Thermal Resistance, Junction to Ambient (Note 7)
R
JA
t<10s 43 C/W
Thermal Resistance, Junction to Case (Note 7) 10.5
RJC
Operating and Storage Temperature Range -55 to +175 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage 40 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 40V, V = 0V
DSS DS GS
Gate-Source Leakage nA
I 100 V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage 1 3 V
V V = V , I = 250A
GS(TH) DS GS D
15 24 V = 10V, I = 6A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
20 32 V = 4.5V, I = 5A
GS D
Diode Forward Voltage V 0.7 1.0 V V = 0V, I = 1.0A
SD GS S
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance C 1060
iss
V = 20V, V = 0V,
DS GS
Output Capacitance C 84 pF
oss
f = 1.0MHz
Reverse Transfer Capacitance 58
C
rss
Gate Resistance 1.6
R V = 0V, V = 0V, f = 1.0MHz
g DS GS
8.8
Total Gate Charge (V = 4.5V) Q
GS g
19.1
Total Gate Charge (V = 10V) Q
GS g
nC
V = 20V, I = 8A
DS D
Gate-Source Charge 3.0
Q
gs
Gate-Drain Charge Q 2.5
gd
Turn-On Delay Time t 5.3
D(ON)
Turn-On Rise Time t 7.1
R V = 25V, R = 2.5
DD L
ns
Turn-Off Delay Time t 15.1 V = 10V, R = 3
D(OFF) GS g
Turn-Off Fall Time t 4.8
F
Body Diode Reverse Recovery Time 10.5 ns
t I = 8A, di/dt = 100A/s
RR F
Body Diode Reverse Recovery Charge 4.15 nC
Q I = 8A, di/dt = 100A/s
RR F
Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8. I and E rating are based on low frequency and duty cycles to keep T = +25C.
AS AS J
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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DMNH4026SSDQ August 2016
Diodes Incorporated
www.diodes.com
Document number: DS39085 Rev. 1 - 2