Green DMTH8012LPSQ
80V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features
Rated to +175C Ideal for High Ambient Temperature
I
D
BV R
DSS DS(ON)
Environments
T = +25C
C
High Conversion Efficiency
17m @ V = 10V 72A
GS
80V
Low R Minimizes On State Losses
DS(ON)
21m @ V = 4.5V 62A
GS
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
PPAP Capable (Note 4)
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AECQ101, supported by a
Mechanical Data
PPAP and is ideal for use in:
Synchronous Rectifier
Case: PowerDI5060-8
Backlighting
Case Material: Molded Plastic, Green Molding Compound. UL
Power Management Functions
Flammability Classification Rating 94V-0
DC-DC Converters
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8
S
D
Pin1
S
D
S D
D
G
Top View
Bottom View Internal Schematic
Top View
Pin Configuration
Ordering Information (Note 5)
Part Number Case Packaging
DMTH8012LPSQ-13 PowerDI5060-8 2,500 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMTH8012LPSQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 80 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C 10
A
Continuous Drain Current, V = 10V (Note 6) I A
GS D
8.4
T = +70C
A
T = +25C 72
C
A
Continuous Drain Current, V = 10V (Note 7) I
GS D
60
T = +70C
C
Maximum Continuous Body Diode Forward Current (Note 7) I 90 A
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 80 A
DM
Avalanche Current, L=0.1mH I 11.6 A
AS
Avalanche Energy, L=0.1mH E 10.2 mJ
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) T = +25C P 2.6 W
A D
Thermal Resistance, Junction to Ambient (Note 6) 57 C/W
R
JA
Total Power Dissipation (Note 7) 136 W
T = +25C P
C D
Thermal Resistance, Junction to Case (Note 7) 1.1 C/W
R
JC
Operating and Storage Temperature Range -55 to +175 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BV 80 - - V V = 0V, I = 1mA
DSS GS D
Zero Gate Voltage Drain Current I - - 1 A V = 64V, V = 0V
DSS DS GS
Gate-Source Leakage I - - 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage 1 - 3 V
V V = V , I = 250A
GS(TH) DS GS D
- 12.3 17
V = 10V, I = 12A
GS D
Static Drain-Source On-Resistance m
R
DS(ON)
- 15.1 21
V = 4.5V, I = 6A
GS D
Diode Forward Voltage - 0.9 1.2 V
V V = 0V, I = 20A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance - 2051 -
C
iss
V = 40V, V = 0V,
DS GS
Output Capacitance - 189.9 - pF
Coss
f = 1MHz
Reverse Transfer Capacitance - 24.6 -
C
rss
Gate Resistance R - 0.44 - V = 0V, V = 0V, f = 1MHz
g DS GS
- 24.1 -
Total Gate Charge (V = 4.5V) Q
GS g
- 46.8 -
Total Gate Charge (VGS = 10V) Qg
nC
VDS = 40V, ID = 12A
Gate-Source Charge - 6.9 -
Qgs
Gate-Drain Charge Q - 12.2 -
gd
Turn-On Delay Time t - 5.8 -
D(ON)
Turn-On Rise Time t - 6.5 -
R V = 40V, V = 10V,
DD GS
ns
Turn-Off Delay Time t - 17.3 - I = 12A, R = 1.6
D(OFF) D G
Turn-Off Fall Time t - 4.7 -
F
Body Diode Reverse Recovery Time t - 33.5 - ns
RR
I = 12A, di/dt = 100A/s
F
Body Diode Reverse Recovery Charge Q - 38.9 - nC
RR
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
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DMTH8012LPSQ March 2016
Diodes Incorporated
www.diodes.com
Document number: DS38376 Rev.1 - 2