MTD5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts PChannel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power MTD5P06V ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage V Vdc (BR)DSS (V = 0 Vdc, I = 0.25 mAdc) 60 GS D Temperature Coefficient (Positive) 61.2 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 60 Vdc, V = 0 Vdc) 10 DS GS (V = 60 Vdc, V = 0 Vdc, T = 150C) 100 DS GS J GateBody Leakage Current (V = 15 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V Vdc GS(th) (V = V , I = 250 Adc) 2.0 2.8 4.0 DS GS D Threshold Temperature Coefficient (Negative) 4.7 mV/C Static DrainSource OnResistance (V = 10 Vdc, I = 2.5 Adc) R 0.34 0.45 GS D DS(on) DrainSource OnVoltage V Vdc DS(on) (V = 10 Vdc, I = 5 Adc) 2.7 GS D (V = 10 Vdc, I = 2.5 Adc, T = 150C) 2.6 GS D J Forward Transconductance g Mhos FS (V = 15 Vdc, I = 2.5 Adc) 1.5 3.6 DS D DYNAMIC CHARACTERISTICS Input Capacitance C 367 510 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 140 200 oss f = 1.0 MHz) Transfer Capacitance C 29 60 rss SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 11 20 ns d(on) Rise Time t 26 50 r (V = 30 Vdc, I = 5 Adc, DD D V = 10 Vdc, R = 9.1 ) GS G TurnOff Delay Time t 17 30 d(off) Fall Time t 19 40 f Gate Charge Q 12 20 nC T (See Figure 8) Q 3.0 1 (V = 48 Vdc, I = 5 Adc, V = 10 Vdc) DS D GS Q 5.0 2 Q 5.0 3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage V Vdc SD (I = 5 Adc, V = 0 Vdc) S GS 1.72 3.5 (I = 5 Adc, V = 0 Vdc, T = 150C) S GS J 1.34 Reverse Recovery Time ns t 97 rr t 73 a (I = 5 Adc, V = 0 Vdc, S GS dI /dt = 100 A/ s) S t 24 b Reverse Recovery Stored Charge Q 0.42 C RR INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance L nH D (Measured from the drain lead 0.25 from package to center of die) 4.5 Internal Source Inductance L nH S (Measured from the source lead 0.25 from package to source bond pad) 7.5 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperature.