X-On Electronics has gained recognition as a prominent supplier of FDS8935 MOSFET across the USA, India, Europe, Australia, and various other global locations. FDS8935 MOSFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

FDS8935 ON Semiconductor

FDS8935 electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.FDS8935
Manufacturer: ON Semiconductor
Category: MOSFET
Description: MOSFET -80V Dual P-Channel PowerTrench MOSFET
Datasheet: FDS8935 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
0
MOQ : 2500
Multiples : 2500
2500 : USD 1.0562
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MOQ : 1
Multiples : 1
1 : USD 1.9556
10 : USD 1.7601
100 : USD 1.4142
500 : USD 1.1619
1000 : USD 1.0562
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0
MOQ : 1
Multiples : 1
1 : USD 0.3357
10 : USD 0.3283
30 : USD 0.3245
100 : USD 0.3189
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 4.8313
10 : USD 1.7463
100 : USD 1.3621
500 : USD 1.1199
1000 : USD 0.8836
2500 : USD 0.8289
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.792
5 : USD 1.61
14 : USD 1.162
39 : USD 1.106
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Obsolete
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MOQ : 2500
Multiples : 2500
2500 : USD 0.5843
5000 : USD 0.5711
12500 : USD 0.5591
N/A

Obsolete
   
Manufacturer
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Maximum Operating Temperature
Pd - Power Dissipation
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Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDS8935 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDS8935 and other electronic components in the MOSFET category and beyond.

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Image Part-Description
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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDS8935 Dual P-Channel PowerTrench MOSFET FDS8935 Dual P-Channel PowerTrench MOSFET -80 V, -2.1 A, 183 m General Description This P-channel MOSFET is produced using ON Features Semiconductors advanced PowerTrench process that has Max r = 183 m at V = -10 V, I = -2.1 A DS(on) GS D been optimized for r , switching performance and DS(on) ruggedness. Max r = 247 m at V = -4.5 V, I = -1.9 A DS(on) GS D High performance trench technology for extremely low r DS(on) High power and current handling capability in a widely used surface mount package Applications Load Switch 100% UIL Tested Synchronous Rectifier RoHS Compliant D2 D2 G2 D2 4 5 D1 5 4 D1 D2 S2 6 Q2 3 6 3 G2 D1 7 2 G1 7 2 S2 Q1 G1 8 1 D1 8 1 S1 S1 Pin 1 SO-8 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -80 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous -2.1 I A D -Pulsed -10 E Single Pulse Avalanche Energy (Note 3) 37 mJ AS Power Dissipation T = 25 C (Note 1a) 3.1 A P W D Power Dissipation T = 25 C (Note 1b) 1.6 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 40 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 78 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS8935 FDS8935 SO-8 13 12 mm 2500 units 1 Publication Order Number: 2010 Semiconductor Components Industries, LLC. October-2017, Rev.3 FDS8935/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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