X-On Electronics has gained recognition as a prominent supplier of FDS6673BZ_F085 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDS6673BZ_F085 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDS6673BZ_F085 ON Semiconductor

FDS6673BZ_F085 electronic component of ON Semiconductor
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Part No.FDS6673BZ_F085
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Fairchild Semiconductor MOSFET -30V P-Channel PowerTrench
Datasheet: FDS6673BZ_F085 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2.646
10 : USD 0.9837
100 : USD 0.7932
500 : USD 0.7227
1000 : USD 0.633
2500 : USD 0.6035
10000 : USD 0.5945
25000 : USD 0.5753
50000 : USD 0.5574
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.4882
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
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Forward Transconductance - Min
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Typical Turn-Off Delay Time
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Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDS6673BZ_F085 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDS6673BZ_F085 and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDS6673BZ-F085 P-Channel PowerTrench MOSFET FDS6673BZ-F085 P-Channel PowerTrench MOSFET -30V, -14.5A, 7.8m Features General Description Max r = 7.8m, V = -10V, I = -14.5A DS(on) GS D This P-Channel MOSFET isproduced using ON Max r = 12m, V = -4.5V, I = -12A DS(on) GS D Semiconductors advanced Power Trench process that Extended V range (-25V) for battery applications GS has been especially tailored to minimize the on-state resistance. HBM ESD protection level of 6.5kV typical (note 3) This device is well suited for PoweManagemenr t and High performance trench technology for extremely low load switching applications ommon c in Notebook r DS(on) Computers and Portable BatteryPacks. High power and current handling capability RoHS compliant Qualified to AEC Q101 D D 5 4 D D 6 3 7 2 G S S 8 1 SO-8 S MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -30 V DS V Gate to Source Voltage 25 V GS Drain Current -Continuous (Note1a) -14.5 A I D -Pulsed -75 A Power Dissipation for Single Operation (Note1a) 2.5 P (Note1b) 1.2 W D (Note1c) 1.0 T , T Operating and Storage Temperature -55 to 150 C J STG Thermal Characteristics R Thermal Resistance , Junction to Ambient (Note 1a) 50 C/W JA R Thermal Resistance , Junction to Case (Note 1) 25 C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS6673BZ FDS6673BZ -F085 13 12mm 2500 units 2016 Semiconductor Components Industries, LLC. 1 Publication Order Number: September-2017, Rev. 2 FDS6673BZ-F085/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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