X-On Electronics has gained recognition as a prominent supplier of FDS6675BZ MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDS6675BZ MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDS6675BZ ON Semiconductor

FDS6675BZ electronic component of ON Semiconductor
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See Product Specifications
Part No.FDS6675BZ
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Datasheet: FDS6675BZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.393 ea
Line Total: USD 982.5 
Availability - 9700
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
9700
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.393
5000 : USD 0.3665
7500 : USD 0.361
10000 : USD 0.3556
15000 : USD 0.3503
25000 : USD 0.345

2121
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 0.6404
10 : USD 0.5194
30 : USD 0.4588
100 : USD 0.4134
500 : USD 0.3772
1000 : USD 0.359

1619
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 1.078
10 : USD 0.7798
30 : USD 0.5726
83 : USD 0.5404
1000 : USD 0.532
2500 : USD 0.5194

9700
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.5313
5000 : USD 0.4956
7500 : USD 0.488
10000 : USD 0.4807
15000 : USD 0.4736

1048
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1065
Multiples : 1
1065 : USD 0.458

4850
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.4124
5000 : USD 0.4018
7500 : USD 0.3819
12500 : USD 0.3759

118825
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.4342
5000 : USD 0.423
7500 : USD 0.4021
12500 : USD 0.3958

4663
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 20
Multiples : 1
20 : USD 0.6653
25 : USD 0.6611
100 : USD 0.5221
250 : USD 0.5184
500 : USD 0.4407
1000 : USD 0.4286
3000 : USD 0.4165

58200
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1065
Multiples : 1
1065 : USD 0.458

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Current Id Max
No. Of Transistors
Operating Temperature Min
Operating Temperature Range
Pulse Current Idm
Termination Type
Voltage Vds Typ
Voltage Vgs Max
Voltage Vgs Rds On Measurement
Kind Of Package
LoadingGif
 
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We are delighted to provide the FDS6675BZ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDS6675BZ and other electronic components in the MOSFETs category and beyond.

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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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The FDS6675BZ is an advanced level N-channel PowerTrench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a P-channel type designed provides efficient and reliable switching performance for medium- to high-side switching applications. It is manufactured by ON Semiconductor and has a unipolar mode of operation, making it suitable for applications demanding a wider range of voltage control with low gate drive requirements. This FET has a -30V drain-source breakdown voltage, a -11A source-drain continuous drain current, and a maximum output power of 2.5 watts at 25°C. It comes in an 8-lead, 200-mil body-width, surface mount plastic small outline package, named SO8. The FDS6675BZ can handle a wide range of temperatures, ranging from -55 to 150°C and is rated for an operating junction temperature of 175°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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