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FDS6699S 30V N-Channel PowerTrench SyncFET December 2012 FDS6699S 30V N-Channel PowerTrench SyncFET Features General Description 21 A, 30 V Max R = 3.6 m V = 10 V The FDS6699S is designed to replace a single SO-8 MOSFET DS(ON) GS Max R = 4.5 m V = 4.5 V and Schottky diode in synchronous DC:DC power supplies. DS(ON) GS This 30V MOSFET is designed to maximize power conversion Includes SyncFET Schottky body diode efciency, providing a low R and low gate charge. The DS(ON) High performance trench technology for extremely low FDS6699S includes an integrated Schottky diode using Fair- R and fast switching DS(ON) childs monolithic SyncFET technology. High power and current handling capability 100% R (Gate Resistance) tested G Applications Synchronous Rectier for DC/DC Converters Notebook Vcore low side switch Point of Load low side switch D 5 4 D D 6 3 D 7 2 G S 8 1 S SO-8 S Absolute Maximum Ratings T =25C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GSS I Drain Current Continuous (Note 1a) 21 A D Pulsed 105 E (Note 4) mJ Single Pulse Avalanche Energy 541 AS P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 C/W JA R Thermal Resistance, Junction-to-Case (Note 1) 25 JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6699S FDS6699S 13 12mm 2500 units 2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS6699S Rev. D33