X-On Electronics has gained recognition as a prominent supplier of FDS6680A MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDS6680A MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDS6680A ON Semiconductor

FDS6680A electronic component of ON Semiconductor
FDS6680A ON Semiconductor
FDS6680A MOSFETs
FDS6680A  Semiconductors

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See Product Specifications
Part No. FDS6680A
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8
Datasheet: FDS6680A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.4487 ea
Line Total: USD 1121.75 
Availability - 2425
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
2425
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.4487
5000 : USD 0.4359
7500 : USD 0.4315
25000 : USD 0.4269

11
Ship by Fri. 17 Jan to Wed. 22 Jan
MOQ : 1
Multiples : 1
1 : USD 1.2084
10 : USD 1.0248
30 : USD 0.9234
100 : USD 0.8088
500 : USD 0.7591
1000 : USD 0.7361

1854
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 1
1 : USD 1.092
10 : USD 0.854
27 : USD 0.6384
74 : USD 0.6034
500 : USD 0.5796

5989
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 892
Multiples : 1
892 : USD 0.5468
1000 : USD 0.5165

2425
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.4487
5000 : USD 0.4359
7500 : USD 0.4315
25000 : USD 0.4269

   
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Msl
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We are delighted to provide the FDS6680A from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDS6680A and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDS6680A FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET Features General Description 12.5 A, 30 V R = 9.5 m V = 10 V DS(ON) GS This N-Channel Logic Level MOSFET is produced using ON Semiconductors advanced Power R = 13 m V = 4.5 V DS(ON) GS Trench process that has been especially tailored to minimize the on-state resistance and yet maintain Ultra-low gate charge superior switching performance. High performance trench technology for extremely These devices are well suited for low voltage and low R battery powered applications where low in-line power DS(ON) loss and fast switching are required. High power and current handling capability DD 5 4 DD DD 6 3 DD 7 2 SO-8 G G 8 1 S S S S S SO-8 Pin 1 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 GSS I Drain Current Continuous (Note 1a) 12.5 A D Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range 55 to +150 J STG C Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1a) 50 C/W JA R Thermal Resistance, Junction-to-Case (Note 1) 25 JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6680A FDS6680A 13 12mm 2500 units 2012 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 6 FDS6680A/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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