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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDS6680AS 30V N-Channel PowerTrench SyncFET May 2008 tm FDS6680AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6680AS is designed to replace a single SO-8 11.5 A, 30 V. R max= 10.0 m V = 10 V DS(ON) GS MOSFET and Schottky diode in synchronous DC:DC R max= 12.5 m V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Includes SyncFET Schottky body diode R and low gate charge. The FDS6680AS DS(ON) includes an integrated Schottky diode using Fairchilds monolithic SyncFET technology. The performance of Low gate charge (22nC typical) the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the High performance trench technology for extremely low performance of the FDS6680 in parallel with a Schottky R and fast switching DS(ON) diode. High power and current handling capability Applications DC/DC converter Low side notebooks D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS 20 I Drain Current Continuous (Note 1a) 11.5 A D Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range 55 to +150 J STG C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R C/W JA Thermal Resistance, Junction-to-Case (Note 1) 25 R C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6680AS FDS6680AS 13 12mm 2500 units FDS6680AS Rev B2(X) 2008 Fairchild Semiconductor Corporation