FDN359BN January 2006 FDN359BN TM N-Channel Logic Level PowerTrench MOSFET Features General Description 2.7 A, 30 V. R = 0.046 V = 10 V DS(ON) GS This N-Channel Logic Level MOSFET is produced R = 0.060 V = 4.5 V DS(ON) GS using Fairchilds Semiconductors advanced PowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state resistance and yet maintain superior switching performance. Low gate charge (5nC typical) These devices are well suited for low voltage and High performance version of industry standard battery powered applications where low in-line power SOT-23 package. Identical pin out to SOT-23 with 30% loss and fast switching are required. higher power handling capability. D D S G S TM G SuperSOT -3 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GSS I A D Maximum Drain Current Continuous (Note 1a) 2.7 Pulsed 15 P Maximum Power Dissipation (Note 1a) 0.5 W D (Note 1b) 0.46 T , T Operating and Storage Temperature Range J STG 55 to +150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 250 R C/W JA R Thermal Resistance, Junction-to-Case (Note 1) 75 C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 359B FDN359BN 7 8mm 3000 units FDN359BN Rev A(W) 2006 Fairchild Semiconductor Corporation FDN359BN Electrical Characteristics T = 25C unless otherwise noted A Symbol Parameter Test Conditions MinTyp Max Units Off Characteristics BV DrainSource Breakdown Voltage 30 V DSS V = 0 V, I = 250 A GS D BVDSS Breakdown Voltage Temperature I = 250 A,Referenced to 25C 21 mV/C D Coefficient T J I Zero Gate Voltage Drain Current DSS V = 24 V, V = 0 V 1 DS GS A O T = -55C 10 A J I GateBody Leakage V = 20 V, V = 0 V 100 nA GSS GS DS On Characteristics (Note 2) V Gate Threshold Voltage V = V , I = 250 A 1 1.8 3 V GS(th) DS GS D VGS(th) Gate Threshold Voltage I = 250 A,Referenced to 25C D 4 mV/C Temperature Coefficient T J R Static DrainSource V = 10 V, I = 2.7 A 0.026 0.046 DS(on) GS D OnResistance V = 4.5 V, I = 2.4 A 0.032 0.060 GS D V = 10 V, I = 2.7 A, T = 125C 0.033 0.075 GS D J I OnState Drain Current V = 10 V, V = 5 V 15 A D(on) GS DS g Forward Transconductance V = 5V, I = 2.7 A 11 S FS DS D Dynamic Characteristics C Input Capacitance 485 650 pF iss V = 15 V, V = 0 V, DS GS C Output Capacitance f = 1.0 MHz 105 140 pF oss C Reverse Transfer Capacitance 65 100 pF rss R Gate Resistance f = 1.0 MHz 1.8 G Switching Characteristics (Note 2) t TurnOn Delay Time 7 14 ns d(on) V = 15V, I = 1 A, DD D V = 10 V, R = 6 GS GEN t TurnOn Rise Time 5 10 ns r t TurnOff Delay Time 20 35 ns d(off) t TurnOff Fall Time 2 4 ns f Q Total Gate Charge 5 7 nC g V = 15 V, I = 2.7 A, DS D V = 5 V GS Q GateSource Charge 1.3 nC gs Q GateDrain Charge 1.8 nC gd FDN359BN Rev A(W)