X-On Electronics has gained recognition as a prominent supplier of FDN5632N-F085 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDN5632N-F085 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDN5632N-F085 ON Semiconductor

FDN5632N-F085 electronic component of ON Semiconductor
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Part No.FDN5632N-F085
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET Trans MOS N-Ch 60V 1.7A
Datasheet: FDN5632N-F085 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3441 ea
Line Total: USD 0.34 
Availability - 2156
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2156
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3441
30 : USD 0.3344

1537
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.784
10 : USD 0.679
41 : USD 0.4186
113 : USD 0.3962
500 : USD 0.3794

   
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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We are delighted to provide the FDN5632N-F085 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDN5632N-F085 and other electronic components in the MOSFETs category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDN5632N F085 N-Channel Logic Level PowerTrench MOSFET September 2015 FDN5632N F085 N-Channel Logic Level PowerTrench MOSFET 60 V, 1.6 A, 98 m Features R = 98 m at V = 4.5 V, I = 1.6 A DS(on) GS D R = 82 m at V = 10 V, I = 1.7 A DS(on) GS D Typ Q = 9.2 nC at V = 10 V g(TOT) GS Low Miller Charge UIS Capability Qualified to AEC Q101 RoHS Compliant Applications DC/DC converter Motor Drives MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage 20 V GS Drain Current Continuous (V = 10V) 1.7 GS I A D Pulsed 10 E Single Pulse Avalanche Energy (Note 1) 74 mJ AS P Power Dissipation 1.1 W D o T , T Operating and Storage Temperature -55 to +150 C J STG o R Thermal Resistance Junction to Case 75 C/W JC 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 111 C/W JA Note: o 1: E of 74mJ is 100% test at L=80mH, I =1.4A, starting T = 25 C AS AS J Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 5632 FDN5632N F085 SSOT3 7 8mm 3000 units 2015 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDN5632N F085 Rev. 1.2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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