Digital FET, Dual N & P Channel FDG6321C General Description These dual N & PChannel logic level enhancement mode field www.onsemi.com effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. This very high density process is S2 especially tailored to minimize onstate resistance. This device has G2 D1 been designed especially on low voltage replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are D2 G1 not required, this dual digital FET can replace several different digital S1 transistors, with different bias resistor values. SC88/SC706/SOT363 CASE 419B02 Features NCh 0.50 A, 25 V MARKING DIAGRAM R = 0.45 V = 4.5 V DS(ON) GS R = 0.60 V = 2.7 V DS(ON) GS 21M PCh 0.41 A, 25 V R = 1.1 V = 4.5 V DS(ON) GS R = 1.5 V = 2.7 V DS(ON) GS 21 = Specific Device Code Very Small Package Outline SC706 M = Assembly Operation Month Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (V < 1.5 V) GS(th) PIN CONNECTIONS GateSource Zener for ESD Ruggedness (>6 kV Human Body Model) 1 6 These Devices are PbFree and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A 2 5 Symbol Parameter NChannel PChannel Units V DrainSource Voltage 25 25 V DSS 3 4 V GateSource Voltage 8 8 V GSS I Drain Current Continuous 0.5 0.41 A D Pulsed 1.5 1.2 ORDERING INFORMATION P Maximum Power Dissipation 0.3 W D See detailed ordering and shipping information on page 8 of (Note 1) this data sheet. T , T Operating and Storage 55 to 150 C J STG Temperature Range ESD Electrostatic Discharge 6 kV Rating MILSTD883D Human Body Model (100 pF / 1500 ) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 1998 1 Publication Order Number: June, 2020 Rev. 5 FDG6321C/DFDG6321C THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Thermal Resistance, JunctiontoAmbient (Note 1) 415 C/W JA 1. R is the sum of the junctiontocase and casetoambient thermal resistance where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board design. R = 415C/W on JC CA JA minimum pad mounting on FR 4 board in still air. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Conditions Type Min Typ Max Unit OFF CHARACTERISTICS BV DrainSource Breakdown Voltage V V =0V, I = 250 A NCh 25 DSS GS D V =0V, I = 250 A PCh 25 GS D BV / T Breakdown Voltage Temperature I = 250 A, Referenced to 25 C NCh 26 mV/ C DSS J D Coefficient I = 250 A, Referenced to 25 C PCh 22 D I Zero Gate Voltage Drain Current V =20V, V =0V NCh 1 A DSS DS GS V =20V, V =0V, T = 55 C 10 DS GS J I GateBody Leakage Current V = 20 V, V =0V PCh 1 A GSS DS GS V = 20 V, V =0V, T = 55 C 10 DS GS J I GateBody Leakage Current V =8V, V =0V NCh 100 nA GSS GS DS V = 8V, V =0V PCh 100 GS DS ON CHARACTERISTICS (Note 2) V Gate Threshold Voltage NCh 0.65 0.8 1.5 V V =V , I = 250 A GS(th) DS GS D V =V , I = 250 A PCh 0.65 0.82 1.5 DS GS D V / T Gate Threshold Voltage I = 250 A, Referenced to 25 C NCh 2.6 mV/ C GS(th) J D Temperature Coefficient I = 250 A, Referenced to 25 C PCh 2.1 D R Static DrainSource V = 4.5 V, I = 0.5 A NCh 0.34 0.45 DS(ON) GS D OnResistance V = 4.5 V, I = 0.5 A, T = 125 C 0.55 0.72 GS D J V = 2.7 V, I = 0.2 A 0.44 0.6 GS D V = 4.5 V, I = 0.41 A PCh 0.85 1.1 GS D V = 4.5 V, I = 0.41 A, 1.2 1.8 GS D T = 125 C J V = 2.7 V, I = 0.05 A 1.15 1.5 GS D I OnState Drain Current V = 4.5 V, V =5V NCh 0.5 A D(ON) GS DS V = 4.5 V, V = 5V PCh 0.41 GS DS g Forward Transconductance V =5V, I = 0.5 A NCh 1.45 S FS DS D V = 5V, I = 0.41 A PCh 0.9 DS D DYNAMIC CHARACTERISTICS C Input Capacitance NChannel NCh 50 pF iss V =10V, V = 0 V, f = 1.0 MHz DS GS PCh 62 PChannel C Output Capacitance NCh 28 oss V = 10 V, V =0V, DS GS f = 1.0 MHz PCh 34 C Reverse Transfer Capacitance NCh 9 rss PCh 10 www.onsemi.com 2