FDFMA2P853T Integrated P-Channel PowerTrench MOSFET and Schottky Diode December 2008 FDFMA2P853T tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 m Features General Description This device is designed specifically as a single package solution MOSFET: for the battery charge switch in cellular handset and other Max r = 120 m at V = 4.5 V, I = 3.0 A DS(on) GS D ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward Max r = 160 m at V = 2.5 V, I = 2.5 A DS(on) GS D voltage schottky diode for minimum conduction losses. Max r = 240 m at V = 1.8 V, I = 1.0 A DS(on) GS D The MicroFET 2x2 Thin package offers exceptional thermal Schottky: performance for its physical size and is well suited to linear mode applications. V < 0.46 V 500 mA F Low profile - 0.55 mm maximum - in the new package MicroFET 2x2 Thin RoHS Compliant Free from halogenated compounds and antimony oxides Pin 1 A NC D A 6 C 1 G NC 5 2 4 D 3 S MicroFET 2X2 Thin G C S MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 20 V DS V Gate to Source Voltage 8 V GS Drain Current -Continuous T = 25 C (Note 1a) 3.0 A I A D -Pulsed 6 Power Dissipation T = 25 C (Note 1a) 1.4 A P W D Power Dissipation T = 25 C (Note 1b) 0.7 A T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG V Schottky Repetitive Peak Reverse Voltage 30 V RRM I Schottky Average Forward Current 1 A O Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 86 JA R Thermal Resistance, Junction to Ambient (Note 1b) 173 JA C/W R Thermal Resistance, Junction to Ambient (Note 1c) 86 JA R Thermal Resistance, Junction to Ambient (Note 1d) 140 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 53 FDFMA2P853T MicroFET 2x2 Thin 7 8 mm 3000 units 1 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FDFMA2P853T Rev.B1 FDFMA2P853T Integrated P-Channel PowerTrench MOSFET and Schottky Diode Electrical Characteristics T = 25 C unless otherwise noted J Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 20 V DSS D GS BV Breakdown Voltage Temperature DSS I = 250 A, referenced to 25 C 12 mV/C D T Coefficient J I Zero Gate Voltage Drain Current V = 16 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current V = 8 V, V = 0 V 100 nA GSS GS DS On Characteristics V Gate to Source Threshold Voltage V = V , I = 250 A 0.4 0.7 1.3 V GS(th) GS DS D V Gate to Source Threshold Voltage GS(th) I = 250 A, referenced to 25 C 2 mV/C D T Temperature Coefficient J V = 4.5 V, I = 3.0 A 90 120 GS D V = 2.5 V, I = 2.5 A 120 160 GS D r Static Drain to Source On Resistance m V = 1.8 V, I = 1.0 A 172 240 DS(on) GS D V = 4.5 V, I = 3.0 A GS D 118 160 T = 125 C J g Forward Transconductance V = 5 V, I = 3.0 A 7 S FS DS D Dynamic Characteristics C Input Capacitance 435 pF iss V = 10 V, V = 0 V, DS GS C Output Capacitance 80 pF oss f = 1.0 MHz C Reverse Transfer Capacitance 45 pF rss Switching Characteristics t Turn-On Delay Time 918 ns d(on) t Rise Time 11 19 ns V = 10 V, I = 1.0 A r DD D V = 4.5 V, R = 6 t Turn-Off Delay Time 15 27 ns GS GEN d(off) t Fall Time 612 ns f Q Total Gate Charge 46 nC g(TOT) V = 10 V, I = 3.0 A DD D Q Gate to Source Gate Charge 0.8 nC gs V = 4.5 V GS Q Gate to Drain Miller Charge 0.9 nC gd Drain-Source Diode Characteristics I Maximum Continuous Drain-Source Diode Forward Current 1.1 A S V Source to Drain Diode Forward Voltage V = 0 V, I = 1.1 A (Note 2) 0.8 1.2 V SD GS S t Reverse Recovery Time 17 ns rr I = 3.0 A, di/dt = 100 A/s F Q Reverse Recovery Charge 6 nC rr Schottky Diode Characteristics T = 25 C 9.9 50 A J I Reverse Leakage V = 5 V R R T = 125 C 2.3 10 mA J T = 25 C 9.9 100 A J I Reverse Leakage V = 20 V T = 85 C 0.3 1 mA R R J T = 125 C 2.3 10 mA J T = 25 C 0.4 0.46 V J V Forward Voltage I = 500 mA F F T = 125 C 0.3 0.35 V J T = 25 C 0.5 0.55 V J V Forward Voltage I = 1 A F F T = 125 C 0.49 0.54 V J FDFMA2P853T Rev.B1 www.fairchildsemi.com 2