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FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode September 2008 July 2014 FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package MOSFET: solution for the battery charge switch in cellular handset -3.0 A, -20V. R = 120 m : V = -4.5 V DS(ON) GS and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently R = 160 m : V = -2.5 V DS(ON) GS connected low forward voltage schottky diode for minimum R = 240 m : V = -1.8 V conduction losses. DS(ON) GS The MicroFET 2x2 package offers exceptional thermal Schottky: perfo rmance for it s physical size and is well suited to linear mode applications. V < 0.46 V 500 mA F Low Profile - 0.8 mm maximun - in the new package MicroFET 2x2 mm RoHS Compliant A NC D 1 A 6 C C D 2 5 G NC 3 4 D S MicroFET G S C Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V MOSFET Drain-Source Voltage -20 V DSS V MOSFET Gate-Source Voltage r8V GSS -3.0 Drain Current -Continuous (Note 1a) I A D -Pulsed -6 V Schottky Repetitive Peak Reverse voltage 30V RRM I Schottky Average Forward Current (Note 1a) 1 A O 1.4 Power dissipation for Single Operation (Note 1a) P W D Power dissipation for Single Operation (Note 1b) 0.7 o T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 86 T JA R Thermal Resistance, Junction-to-Ambient (Note 1b) 173 T JA o C/W R Thermal Resistance, Junction-to-Ambient (Note 1c) 86 T JA R Thermal Resistance, Junction-to-Ambient (Note 1d) 140 T JA Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity .853 FDFMA2P853 7inch 8mm 3000 units 2008 Fairchild Semiconductor Corporation 1 FDFMA2P853 Rev. D3 (W)