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FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode August 2005 FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Applications FDFM2N111 combines the exceptional performance of Standard Buck Converter Fairchild s PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a Features MicroFET package. This device is designed specifically as a single package 4 A, 20 V R = 100m V = 4.5 V DS(ON) GS solution for Standard Buck Converter. It features a fast switching, low gate charge MOSFET with very low on-state R = 150m V = 2.5 V DS(ON) GS resistance. Low Profile - 0.8 mm maximun - in the new package MicroFET 3x3 mm PIN 1 A S/C G 1 6 A A C D 2 5 S/C S/C 3 4 G D D A S/C TOP BOTTOM MLP 3x3 Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage 12 V GSS Drain Current -Continuous (Note 1a) 4 I A D -Pulsed 10 V Schottky Repetitive Peak Reverse voltage 20 V RRM I Schottky Average Forward Current (Note 1a) 2 A O 1.7 Power dissipation (Steady State) (Note 1a) P W D Power dissipation (Steady State) (Note 1b) 0.8 o T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics o R Thermal Resistance, Junction-to-Ambient (Note 1a) 70 C/W JA o R Thermal Resistance, Junction-to-Ambient (Note 1b) 150 C/W JA Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity 2N111 FDFM2N111 7inch 12mm 3000 units 2005 Fairchild Semiconductor Corporation 1 FDFM2N111 Rev. C2 (W)