DMT3006LFV 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features I Max Low R Ensures On-State Losses are Minimized D DS(ON) BV R Max DSS DS(ON) T = +25C Small Form Factor Thermally Efficient Package Enables Higher C Density End Products 7m V = 10V GS 30V 60A Occupies just 33% of the Board Area Occupied by SO-8 Enabling 11m V = 4.5V GS Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data Case: PowerDI 3333-8 (Type UX) This MOSFET is designed to minimize the on-state resistance (R ), yet maintain superior switching performance, making it Case Material: Molded Plastic,Gree Molding Compound. DS(ON) UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Applications Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.03 grams (Approximate) Analog Switch Pin1 D S S S G G D D S D D Equivalent Circuit Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging DMT3006LFV-7 PowerDI3333-8 (Type UX) 2,000/Tape & Reel DMT3006LFV-13 PowerDI3333-8 (Type UX) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMT3006LFV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 60 C Continuous Drain Current, V = 10V (Note 7) I A GS D State 45 T = +70C C Maximum Body Diode Forward Current (Note 7) 2 A I S Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) 90 A I DM Pulsed Drain Body Diode Forward Current (380s Pulse, Duty Cycle = 1%) 90 A I SM Avalanche Current (L = 0.1mH) (Note 8) I 24 A AS Avalanche Energy (L = 0.1mH) (Note 8) E 29 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.0 W P D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 130 C/W JA Total Power Dissipation (Note 6) P 2.0 W D Thermal Resistance, Junction to Ambient (Note 6) Steady State 63 R JA C/W Thermal Resistance, Junction to Case (Note 7) 2.9 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D 1 A Zero Gate Voltage Drain Current T = +25C I V = 24V, V = 0V J DSS DS GS V = +20V, V = 0V GS DS Gate-Source Leakage 100 nA I GSS V = -16V, V = 0V GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V 1.0 3.0 V V = V , I = 250A GS(TH) DS GS D 5.6 7 V = 10V, I = 9.0A GS D Static Drain-Source On-Resistance m R DS(ON) 8.0 11 V = 4.5V, I = 8.5A GS D Diode Forward Voltage 0.70 1.2 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance 1,155 C iss V = 15V, V = 0V, DS GS Output Capacitance 456 pF C oss f = 1.0MHz Reverse Transfer Capacitance 72 C rss Gate Resistance 1.6 R V = 0V, V = 0V, f =1.0MHz g DS GS Total Gate Charge (V = 4.5V) Q 8.4 GS g 16.7 Total Gate Charge (V = 10V) Q GS g nC V = 15V, I = 9A DD D 2.2 Gate-Source Charge Q gs 3.5 Gate-Drain Charge Q gd Turn-On Delay Time t 3.5 D(ON) 5.5 Turn-On Rise Time t R V = 15V, V = 10V, DD GS ns Turn-Off Delay Time 13.5 R = 3, I = 9A t g D D(OFF) Turn-Off Fall Time 4.6 t F Reverse Recovery Time 19.3 ns t RR I = 1.5A, di/dt = 100A/s F Reverse Recovery Charge 8.6 nC Q RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMT3006LFV August 2018 Diodes Incorporated www.diodes.com Document number: DS39730 Rev. 3 - 2 ADVANCED INFORMATION