Green DMTH10H010SPS 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature I D BV R Max DSS DS(ON) Environments T = +25C C 100% Unclamped Inductive Switching Ensures more reliable 123A 8.8m VGS = 10V and robust end application 100V Low R Minimizes On-State Losses DS(ON) 11.5m V = 6V 108A GS Fast Switching Speed Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description Case: PowerDI 5060-8 This new generation N-Channel Enhancement Mode MOSFET is designed to minimize R , yet maintain superior switching Case Material: Molded Plastic, Green Molding Compound. DS(ON) performance. This device is ideal for use in notebook battery power UL Flammability Classification Rating 94V-0 management and load switch. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminal Finish - Matte Tin Annealed over Copper Leadframe. Applications Solderable per MIL-STD-202, Method 208 e3 Motor Control Weight: 0.097 grams (Approximate) DC-DC Converters Power Management PowerDI5060-8 D S D Pin1 S D D S G D G S Top View Top View Internal Schematic Pin Configuration Bottom View Ordering Information (Note 4) Part Number Case Packaging DMTH10H010SPS-13 PowerDI5060-8 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH10H010SPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = +25C 11.8 A Continuous Drain Current, V = 10V (Note 5) I A GS D 8.3 TA = +100C T = +25C 123 C A Continuous Drain Current, V = 10V (Note 6) I GS D 87 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 250 A DM Maximum Continuous Body Diode Forward Current I 100 A S Avalanche Current, L = 0.3mH I 33.7 A AS Avalanche Energy, L = 0.3mH E 170 mJ AS Avalanche Current (Note 7), L = 3mH 14.3 A I AS Avalanche Energy (Note 7), L = 3mH 307 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.5 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) 99 C/W R JA Total Power Dissipation (Note 6) 166 W T = +25C P C D Thermal Resistance, Junction to Case (Note 6) 0.9 C/W R JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 100 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 80V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 2 4 V V = V , I = 250A GS(TH) DS GS D 6.6 8.8 V = 10V, I = 13A GS D Static Drain-Source On-Resistance m R DS(ON) 8.5 11.5 V = 6V, I = 13A GS D Diode Forward Voltage 0.8 1.3 V VSD VGS = 0V, IS = 13A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 4,468 CISS V = 50V, V = 0V DS GS Output Capacitance 746 pF C OSS f = 1MHz Reverse Transfer Capacitance 32 C RSS Gate Resistance 0.91 R V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge 56.4 Q G V = 50V, I = 13A, DD D 15.4 Gate-Source Charge Q nC GS V = 10V GS 14 Gate-Drain Charge Q GD 18.6 Turn-On Delay Time t D(ON) 22.5 Turn-On Rise Time t R V = 50V, V = 10V, DD GS ns 44.8 Turn-Off Delay Time I = 13A, R = 6 tD(OFF) D g 29.5 Turn-Off Fall Time t F Reverse Recovery Time 54.5 ns t RR I = 13A, di/dt = 100A/s F Reverse Recovery Charge 106.4 nC Q RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH10H010SPS August 2017 Diodes Incorporated www.diodes.com Document number: DS39423 Rev. 2 - 2