DMN7022LFGQ 75V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits 100% Unclamped Inductive Switching Ensures More Reliable I Max D BV R Max DSS DS(ON) and Robust End Application T = +25C A Low R Ensures On-state Losses are Minimized 7.8A DS(ON) 22m V = 10V GS 75V Small Form Factor Thermally Efficient Package Enables Higher 28m V = 4.5V 6.9A GS Density End Products Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product Description and Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This MOSFET is designed to meet the stringent requirements of Halogen and Antimony Free. Green Device (Note 3) automotive applications. It is qualified to AEC-Q101, supported by a Qualified to AEC-Q101 Standards for High Reliability PPAP and is ideal for use in: PPAP Capable (Note 4) Backlighting Mechanical Data Power Management Functions DC-DC Converters Case: PowerDI 3333-8 Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 D Pin 1 S S S G G D D D D S Bottom View Top View Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMN7022LFGQ-7 2,000/Tape & Reel PowerDI3333-8 DMN7022LFGQ-13 3,000/Tape & Reel PowerDI3333-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN7022LFGQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 75 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 7.8 A Continuous Drain Current (Note 7) V = 10V I A GS D State 6.2 T = +70C A Steady T = +25C 23 C A Continuous Drain Current (Note 8) V = 10V I GS D State 18 T = +70C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 56 A DM Maximum Continuous Body Diode Forward Current (Note 6) I 2.1 A S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I 50 A SM Avalanche Current, L = 0.1mH (Note 9) I 28.8 A AS Avalanche Energy, L = 0.1mH (Note 9) 42.2 mJ EAS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) P 0.9 W D Steady State 125 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 67 Total Power Dissipation (Note 7) P 2 W D Steady State 62 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 34 C/W Thermal Resistance, Junction to Case (Note 8) R 6.9 JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage 75 V BV V = 0V, I = 250A DSS GS D 1 A Zero Gate Voltage Drain Current (T = +25C ) I V = 75V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 10) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(TH) DS GS D 14.6 22 V = 10V, I = 7.2A GS D Static Drain-Source On-Resistance m R DS(ON) 20.5 28 V = 4.5V, I = 6.4A GS D Diode Forward Voltage V 0.72 V V = 0V, I = 3.2A SD GS S DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance C 2737 pF iss V = 35V, V = 0V, DS GS Output Capacitance pF Coss 126 f = 1MHz Reverse Transfer Capacitance pF C 96.1 rss Gate Resistance 0.89 R V = 0V, V = 0V, f = 1MHz g DS GS 26.4 nC Total Gate Charge (V = 4.5V) Q GS g 56.5 nC Total Gate Charge (V = 10V) Q GS g V = 38V, I = 7.2A DS D Gate-Source Charge 12 nC Q gs 11.8 Gate-Drain Charge Q nC gd 6.1 Turn-On Delay Time t ns D(ON) 5.7 Turn-On Rise Time t ns R V = 10V, V = 38V, GS DS 19.6 Turn-Off Delay Time t ns R = 1, I = 5.7A D(OFF) g D 3.9 Turn-Off Fall Time ns tF Body Diode Reverse Recovery Time ns t 26.2 RR I = 5.7A, di/dt = 100A/s F Body Diode Reverse Recovery Charge nC Q 25.2 RR Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. 2 of 6 DMN7022LFGQ August 2017 Diodes Incorporated www.diodes.com Document number: DS39840 Rev. 2 - 2 ADVANCE INFORMATION