NTD6414AN, NVD6414AN N-Channel Power MOSFET 100 V, 32 A, 37 m Features Low R DS(on) High Current Capability NTD6414AN, NVD6414AN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 107 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 100 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Negative Threshold Temperature V /T 8.3 mV/C GS(TH) J Coefficient DraintoSource OnResistance R V = 10 V, I = 32 A 30 37 m DS(on) GS D Forward Transconductance gFS V = 5.0 V, I = 10 A 18 S GS D CHARGES, CAPACITANCES AND GATE RESISTANCE pF Input Capacitance C 1450 ISS Output Capacitance C 230 V = 0 V, f = 1.0 MHz, V = 25 V OSS GS DS Reverse Transfer Capacitance C 95 RSS Total Gate Charge Q 40 nC G(TOT) Threshold Gate Charge Q 1.7 G(TH) GatetoSource Charge Q V = 10 V, V = 80 V, I = 32 A 8.0 GS GS DS D GatetoDrain Charge Q 20 GD Plateau Voltage V 5.9 V GP Gate Resistance R 1.9 G SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 11 ns d(on) Rise Time t 52 r V = 10 V, V = 80 V, GS DD I = 32 A, R = 6.1 Turn Off Delay Time t D G 38 d(off) Fall Time t 48 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.87 1.2 V SD J V = 0 V, I = 32 A GS S T = 125C 0.76 J Reverse Recovery Time t 68 ns RR Charge Time T 51 a V = 0 V, dI /dt = 100 A/ s, GS S I = 32 A S Discharge Time T 16 b Reverse Recovery Charge Q 195 nC RR 2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.