NTE2376 MOSFET NCh, Enhancement Mode High Speed Switch TO247 Type Package D Features: Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching G Ease of Paralleling Simple Drive Requirements S Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C .................................................................. 30A C T = +100 C ................................................................. 19A C Pulsed Drain Current (Note 1), I .................................................. 120A DM Power Dissipation (T = +25 C), P ................................................ 190W C D Derate Linearly Above 25 C ............................................... 1.5W/ C GatetoSource Voltage, V ...................................................... 20V GS Single Pulse Avalanche Energy (Note 2), E ....................................... 410mJ AS Avalanche Current (Note 1), I ...................................................... 30A AR Repetitive Avalanche Energy (Note 1), E .......................................... 19mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt ........................................... 5V/ns Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Mounting Torque (6 32 or M3 Screw) .................................... 10 lbf in (1.1N m) Thermal Resistance, Junction toCase, R .................................... 0.65 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 40 C/W thJA Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ........... 0.24 C/W thCS Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 2. V = 50V, starting T = +25 C, L = 683 H, R = 25 , I = 30A DD J G AS Rev. 1013Note 3. I 30A, di/dt 190A/ s, V V , T +150 C SD DD (BR)DSS J