X-On Electronics has gained recognition as a prominent supplier of NTE2390 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE2390 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE2390 NTE

NTE2390 electronic component of NTE
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See Product Specifications
Part No.NTE2390
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: N-MOSFET; 60V; 12A; TO220
Datasheet: NTE2390 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.1598 ea
Line Total: USD 3.16 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 10
Multiples : 1
10 : USD 2.699
100 : USD 2.1423
250 : USD 2.0817
500 : USD 2.0212
1000 : USD 1.9123
2500 : USD 1.8639
5000 : USD 1.8276
7500 : USD 1.8033

0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 3.1598
3 : USD 2.8548
7 : USD 2.4156
18 : USD 2.2814
25 : USD 2.257

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2390 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2390 and other electronic components in the MOSFETs category and beyond.

Image Part-Description
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Stock : 12
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2398
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Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2396A
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Stock : 47
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2391
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Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Image Part-Description
Stock Image NTE2393
Transistor: N-MOSFET; 500V; 9A; TO3P
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2397
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Stock : 12
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2987
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NTE2390 MOSFET NChannel Enhancement Mode, High Speed Switch Description: The NTE2390 is an NChannel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. D Features: Silicon Gate for Fast Switching Speeds I , V , V , and SOA Specified at Elevated Temperatures. DSS DC(on) GS(th) Rugged SOA is Power Dissipation Limited G Source toDrain Diode Characterized for Use With Inductive Loads S Absolute Maximum Ratings: DrainSource Voltage, V ......................................................... 60V DSS DrainGate Voltage (R = 1M ), V .............................................. 60V GS DGR GateSource Voltage, V ......................................................... 20V GS Drain Current, I D Continuous .................................................................. 12A Pulsed ...................................................................... 30A Total Power Dissipation (T = +25 C), P ............................................ 75W C D Derate Above 25 C ....................................................... 0.6W/ C Operating Junction Temperature Range, T .................................. 65 to +150 C J Storage Temperature Range, T .......................................... 65 to +150 C stg Maximum Thermal Resistance, Junction toCase, R ........................... 1.67 C/W thJC Maximum Thermal Resistance, Junction toAmbient, R ......................... 30 C/W thJA Maximum Lead Temperature (During soldering), T .................................. +275 C L Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics DrainSource Breakdown Voltage V I = 0.25mA, V = 0 60 V (BR)DSS D GS ZeroGate Voltage Drain Current I V = 0, V = Max Rating 0.2 mA DSS GS DS V = 0, V = 48V, T = +125 C 1.0 mA GS DS J GateBody Leakage Current, Forward I V = 0, V = 20V 100 nA GSSF DS GSF GateBody Leakage Current, Reverse I V = 0, V = 20V 100 nA GSSR DS GSR ON Characteristics (Note 1) Gate Threshold Voltage V V = V , I = 1mA 2.0 4.5 V GS(th) DS GS D V = V , I = 1mA, T = +100 C 1.5 4.0 V DS GS D J Static DrainSource On Resistance r V = 10V, I = 6A 0.2 DS(on) GS D DrainSource ONVoltage V V = 10V, I = 12A 3.0 V DS(on) GS D V = 10V, I = 6A, T = 100 C 2.8 V GS D J Forward Transconductance g V = 15V, I = 6A 4 mhos fs DS D Dynamic Characteristics Input Capacitance C 400 pf V = 25V, V = 0, iss DS GS f = 1MHz Output Capacitance C 300 pf oss Reverse Transfer Capacitance C 100 pf rss Switching Characteristics (T = +100 C, Note 1) J TurnOn Time t V = 25V, I = 0.5 Rated I , 60 ns d(on) DD D D R = 50 gen Rise Time t 160 ns r TurnOff Delay Time t 80 ns d(off) Fall Time t 110 ns f Total Gate Charge Q V = 48V, V = 10V, 13 26 nC g DS GS I = Rated I D D GateSource Charge Q 6 nC gs GateDrain Charge Q 7 nC gd Source Drain Diode Characteristics (Note 1) Forward ON Voltage V I = Rated I , V = 0 1.8 3.2 V SD S D GS Forward TurnOn Time t Limited by stray inductance on Reverse Recovery Time t 300 ns rr Internal Package Inductance Internal Drain Inductance L Measured from the contact screw 3.5 nH d on tab to center of die Measured from the drain lead 0.25 4.5 nH from package to center of die Internal Source Inductance L Measured from the source lead 7.5 nH s 0.25 from package to source bond pad Note 1. Pulse test: Pulse width 300 s, Duty cycle 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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