X-On Electronics has gained recognition as a prominent supplier of NTE6410 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE6410 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE6410 NTE

NTE6410 electronic component of NTE
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See Product Specifications
Part No.NTE6410
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: UJT; unipolar; 300mW; TO92
Datasheet: NTE6410 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.764 ea
Line Total: USD 8.76 
Availability - 1
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 8.764
3 : USD 6.02
8 : USD 5.698

   
Manufacturer
Product Category
Mounting
Kind Of Package
Case
Polarisation
Type Of Transistor
Valley Current
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE6410 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE6410 and other electronic components in the MOSFETs category and beyond.

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NTE6410 Unijunction Transistor (UJT) Description: The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Absolute Maximum Ratings: (T = +25C unless other specified) A RMS Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/C RMS Emitter Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA E PeakPulse Emitter Current (Note 1), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A E Emitter Reverse Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V B2E Interbase Voltage (Note 2), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V B2B1 Operating Junction Temperature Range, T 65. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to +125C J Storage Temperature Range, T 65. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to +150C stg Note 1. Duty cycle 1%, PRR = 10 PPS Note 2. Based upon power dissipation at T = +25C A Electrical Characteristics: (T = +25C unless other specified) A Parameter Symbol Test Conditions Min Typ Max Unit Intrinsic Standoff Ratio V = 10V, Note 3 0.70 0.85 B2B1 Interbase Resistance R 4.0 6.0 9.1 k BB Interbase Resistance Temperature Coefficient R 0.1 0.9 %/C BB Emitter Saturation Voltage V V = 10V, I = 50mA, Note 4 2.5 V BE1(sat) B2B1 E Modulated Interbase Current I V = 10V, I = 50mA 15 mA B2(Mod) B2B1 E Emitter Reverse Current I V = 30V, I = 0 0.005 1.0 A EB2O B2E B1 PeakPoint Emitter Current I V = 25V 1.0 5.0 A P B2B1 ValleyPoint Current I V = 20V, R = 100 , Note 4 4.0 7.0 mA V B2B1 B2 BaseOne Peak Pulse Voltage V 5.0 8.0 V OB1 Note 3. Intrinsic standoff ratio, is defined in terms of peakpoint voltage, V , by means of the equa- P tion: V = V V , where V is approximately 0.49 volts at +25C I = 10 A and de- P B2B1 F F F creases with temperature at approximately 2.5mV/C. Components R , C , and the UJT 1 1 form a relaxation oscillator, the remaining circuitry serves as a peakvoltage detector. The forward drop of Diode D compensates for V . To use, the call button is pushed, and R 1 F 3 is adjusted to make the current meter, M , read full scale. When the call button is released, 1 the value of is read directly from the meter, if full scale on the meter reads 1.0. Note 4. Use pulse techniques: PW 300 s, duty cycle 2.0% to avoid internal heating, which may result in erroneous readings..135 (3.45) Min .210 (5.33) Seating Plane Max .021 (.445) Dia Max .500 (12.7) Min B E B2 .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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