X-On Electronics has gained recognition as a prominent supplier of NTE6411 Diacs across the USA, India, Europe, Australia, and various other global locations. NTE6411 Diacs are a product manufactured by NTE. We provide cost-effective solutions for Diacs, ensuring timely deliveries around the world.

NTE6411 NTE

NTE6411 electronic component of NTE
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See Product Specifications
Part No.NTE6411
Manufacturer: NTE
Category: Diacs
Description: Diac; Ifmax:2A; DO35; 35÷45V
Datasheet: NTE6411 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.134 ea
Line Total: USD 1.13 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 6
Multiples : 1
6 : USD 1.1675
50 : USD 1.0613
250 : USD 0.9195
1000 : USD 0.8239
2500 : USD 0.7778
5000 : USD 0.7645
7500 : USD 0.7354
10000 : USD 0.7245

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.134
3 : USD 0.994
19 : USD 0.91
52 : USD 0.854

   
Manufacturer
Product Category
Case
Mounting
Kind Of Package
Type Of Semiconductor Component
Max Load Current
Breakover Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE6411 from our Diacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE6411 and other electronic components in the Diacs category and beyond.

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NTE6407, NTE6408, NTE6411, NTE6412 Bilateral Trigger Diodes (DIACS) Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blockingtoconduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover voltage rating of the DIAC. Features: GlassChip Passivation DO35 Type Trigger Package Wide Voltage Range Selection Absolute Maximum Ratings: Maximum Trigger Firing Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1 F Device Dissipation (T = 40 to +40C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW A D Derate Above +40C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.6mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C j Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C stg Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278C/W thJA Thermal Resistance, JunctiontoLead (Note 1), R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100C/W thJL Lead Temperature (During Soldering, 1/16 (1.59mm) from case, 10sec max), T . . . . . . . . +230C L Note 1. Based on maximum lead temperature of +85C at 250mW. Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Breakover Voltage (Forward and Reverse) NTE6407 V 24 28 32 V BO NTE6408 28 32 36 V NTE6411 35 40 45 V NTE6412 56 63 70 V Breakover Voltage Symmetry NTE6407, NTE6408 V Note 2 2 V BO NTE6411 3 V NTE6412 4 V Note 2. V = +V V . BO BO BOElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Breakback Voltage NTE6407, NTE6408 V V , at 10mA, Note 3 7 V BB NTE6411 V , Note 3 10 V NTE6412 20 V Peak Breakover Current I At Breakover Voltage 25 A BO Peak Pulse Current NTE6407, NTE6408, NTE6411 I For 10 s, 120PPs, T +40C 2.0 A TRM A NTE6412 1.5 A Note 3. Typical switching time is 900ns measured at I . PK 1.100 (27.9) .210 (5.33) Max .030 (.726) .107 (2.73)

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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