X-On Electronics has gained recognition as a prominent supplier of NTE6418 SCRs across the USA, India, Europe, Australia, and various other global locations. NTE6418 SCRs are a product manufactured by NTE. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

NTE6418 NTE

NTE6418 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE6418
Manufacturer: NTE
Category: SCRs
Description: Thyristor SIDAC 90V 13A 2-Pin
Datasheet: NTE6418 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8: USD 2.6537 ea
Line Total: USD 21.23 
Availability - 7
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 8  Multiples: 1
Pack Size: 1
Availability Price Quantity
7
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 8
Multiples : 1
8 : USD 2.6537
25 : USD 2.4125
250 : USD 1.9125
500 : USD 1.8
1000 : USD 1.725
2500 : USD 1.6875
5000 : USD 1.6375
7500 : USD 1.6125

   
Manufacturer
Product Category
Mounting
Type Of Semiconductor Component
Max Load Current
Breakover Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE6418 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE6418 and other electronic components in the SCRs category and beyond.

Image Part-Description
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Image Part-Description
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Stock Image SKT 100/16 E
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Stock Image SKT 16/14E
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Stock Image SKT 40/18 E
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Stock Image SKT 50/12 E
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Stock Image SKT 50/16 E
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Stock Image SKT 551/12 E
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Stock Image SKT 551/18 E
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Stock Image SKT760/18E
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NTE6415 thru NTE6419 Bidirectional Thyristor Diodes (SIDAC) Description: The NTE6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered switches with greater power handling capabilities than standard DIACs. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low onstate voltage. Conduction will continue until the current is interrupted or drops below the minimum holding current of the device. Features: Especially Effective in AC Circuits Switching Function Directly with the AC Power Line Applicable for Various Pulse Generators Applications: High Voltage Lamp Ignitors Xenon Ignitors Natural Gas Ignitors Overvoltage Protection Gas Oil Ignitors Pulse generators High Voltage Power Supplies Fluorescent Lighting Ignitors Absolute Maximum Ratings: Peak Off Voltage, V DRM NTE6415, NTE6416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V NTE6417, NTE6418, NTE6419 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Effective Current (T = +40C, 50Hz, Sine Wave, Conducting Angle = 180), I . . . . . . . . . . . . . . 1A A T Surge Current (50Hz, NonRepeated 1 Cycle Sine wave, Peak Value), I . . . . . . . . . . . . . . . 13A TSM Peak Current (T = +40C, Pulse Width = 10 s, f = 1kHz), I . . . . . . . . . . . . . . . . . . . . . . . . . . 20A A TRM Current Rise Rate, di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/ s Maximum Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 to +125C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15C/W thJC Lead Temperature (During Soldering, 5mm from case, 5sec max), T . . . . . . . . . . . . . . . . . . +250C LElectrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Breakover Voltage V 50Hz Sine wave, I = 0 45 60 V NTE6415 BO B NTE6416 55 65 V NTE6417 95 113 V NTE6418 104 118 V NTE6419 110 125 V Peak Off Current I 50Hz Sine Wave, V = Rated V 10 A DRM DRM Breakover Current I 50Hz Sine Wave 0.5 mA BO Holding Current I 50Hz Sine Wave 50 mA H ON Voltage V I = 1A 1.5 V T T Switching Resistance R 50Hz Sine Wave 0.1 k S .944 (24.0) .295 (7.5) Min Max .051 (1.29) .188 (4.78)

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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