NTGS3136P, NVGS3136P MOSFET Power, Single, P-Channel, TSOP-6 -20 V, -5.8 A Features www.onsemi.com Low R in TSOP6 Package DS(on) 1.8 V Gate Rating V R TYP I MAX (BR)DSS DS(ON) D Fast Switching 25 m 4.5 V 5.1 A NV Prefix for Automotive and Other Applications Requiring Unique 20 V 32 m 2.5 V 4.5 A Site and Control Change Requirements AECQ101 Qualified and 41 m 1.8 V 2.5 A PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS PChannel Compliant 12 56 Applications Optimized for Battery and Load Management Applications in Portable Equipment 3 High Side Load Switch Switching Circuits for Game Consoles, Camera Phone, etc. 4 MAXIMUM RATINGS (T = 25C unless otherwise stated) J MARKING Parameter Symbol Value Unit DIAGRAM DraintoSource Voltage V 20 V DSS GatetoSource Voltage V 8.0 V GS TSOP6 XXX M CASE 318G Continuous Drain T = 25C I 5.1 A D Steady Current (Note 1) STYLE 1 1 State T = 85C 3.6 A A 1 t 5 s T = 25C 5.8 A XXX = Device Code M = Date Code Power Dissipation Steady P 1.25 D = PbFree Package (Note 1) State T = 25C W A (Note: Microdot may be in either location) t 5 s 1.6 Continuous Drain I T = 25C 3.7 A D Current (Note 2) A PIN ASSIGNMENT T = 85C 2.7 Steady A State Drain DrainSource Power Dissipation P 0.7 W D T = 25C A 6 5 4 (Note 2) Pulsed Drain Current t = 10 s I 20 A p DM Operating Junction and Storage Temperature T , 55 to C J T 150 STG 1 2 3 Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Drain Drain Gate Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq See detailed ordering and shipping information in the package 2 oz including traces) dimensions section on page 5 of this data sheet. 2. Surfacemounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq). Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 2 NTGS3136P/DNTGS3136P, NVGS3136P THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoAmbient Steady State (Note 3) R 100 JA JunctiontoAmbient t = 5 s (Note 3) R 77 C/W JA JunctiontoAmbient Steady State (Note 4) R 185 JA 3. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces) 4. Surfacemounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 13 mV/C (BR)DSS J ID = 250 A, Reference 25C Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A J DSS V = 0 V, GS V = 20 V DS T = 85C 5.0 J GatetoSource Leakage Current I V = 0 V, V = 8.0 V 0.1 A GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 3 mV/C GS(TH) J V = 4.5 V, I = 5.1 A 25 33 DraintoSource On Resistance R m DS(on) GS D V = 2.5 V, I = 4.5 A 32 40 GS D V = 1.8 V, I = 2.5 A 41 51 GS D Forward Transconductance g V = 5.0 V, I = 5.1 A 22 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 1901 pF ISS Output Capacitance C V = 0 V, f = 1 MHz, V = 10 V 274 OSS GS DS Reverse Transfer Capacitance C 175 RSS Total Gate Charge Q 18 29 nC G(TOT) Threshold Gate Charge Q 0.7 G(TH) V = 4.5 V, V = 10 V GS DS I = 5.1 A D GatetoSource Charge Q 2.4 GS GatetoDrain Charge Q 4.3 GD Gate Resistance R 7.6 G SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 9 19 ns d(ON) Rise Time T 9 19 r V = 4.5 V, V = 10 V, GS DD I = 1.0 A, R = 6.0 D G TurnOff Delay Time t 99 160 d(OFF) Fall Time T 48 79 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.7 1.2 V J SD GS I = 1.7 A S T = 125C 0.6 J Reverse Recovery Time t 37 60 ns V = 0 V, d /d = 100 A/ s, RR GS IS t I = 1.7 A S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width 300 s, duty cycle 2% 6. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2