NTGS3433T1 MOSFET P-Channel, TSOP-6 -3.3 A, -12 V NTGS3433T1 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Notes 3 & 4) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage V Vdc (BR)DSS (V = 0 Vdc, I = 10 A) 12 GS D Zero Gate Voltage Drain Current I Adc DSS (V = 0 Vdc, V = 8 Vdc, T = 25C) 1.0 GS DS J (V = 0 Vdc, V = 8 Vdc, T = 70C) 5.0 GS DS J GateBody Leakage Current I nAdc GSS (V = 8.0 Vdc, V = 0 Vdc) 100 GS DS GateBody Leakage Current I nAdc GSS (V = +8.0 Vdc, V = 0 Vdc) 100 GS DS ON CHARACTERISTICS Gate Threshold Voltage V Vdc GS(th) (V = V , I = 250 Adc) 0.50 0.70 1.50 DS GS D Static DrainSource OnState Resistance R DS(on) (V = 4.5 Vdc, I = 3.3 Adc) 0.055 0.075 GS D (V = 2.5 Vdc, I = 2.9 Adc) 0.075 0.095 GS D Forward Transconductance g mhos FS (V = 10 Vdc, I = 3.3 Adc) 7.0 DS D DYNAMIC CHARACTERISTICS Total Gate Charge Q 7.0 15 nC tot (V = 10 Vdc, V = 4.5 Vdc, DS GS GateSource Charge Q 2.0 gs I = 3.3 Adc) D GateDrain Charge Q 3.5 gd Input Capacitance C 550 pF iss (V = 5.0 Vdc, V = 0 Vdc, DS GS Output Capacitance C 450 oss f = 1.0 MHz) Reverse Transfer Capacitance C 200 rss SWITCHING CHARACTERISTICS TurnOn Delay Time t 20 30 ns d(on) Rise Time t 20 30 r (V = 10 Vdc, I = 1.0 Adc, DD D V = 4.5 Vdc, R = 6.0 ) GS g TurnOff Delay Time t 110 120 d(off) Fall Time t 100 115 f Reverse Recovery Time t 30 ns (I = 1.7 Adc, dl /dt = 100 A/ s) S S rr BODYDRAIN DIODE RATINGS Diode Forward OnVoltage (I = 1.7 Adc, V = 0 Vdc) V 0.80 1.5 Vdc S GS SD Diode Forward OnVoltage (I = 3.3 Adc, V = 0 Vdc) V 0.90 Vdc S GS SD 3. Indicates Pulse Test: P.W. = 300 sec max, Duty Cycle = 2%. 4. Class 1 ESD rated Handling precautions to protect against electrostatic discharge are mandatory.