NTMFD4902NFT1G ON Semiconductor

NTMFD4902NF MOSFET Power, Dual, N-Channel with Integrated Schottky, SO8FL 30 V, High Side 18 A / Low Side 23 A www.onsemi.com Features V R MAX I MAX CoPackaged Power Stage Solution to Minimize Board Space (BR)DSS DS(ON) D 6.5 m 10 V Low Side MOSFET with Integrated Schottky Q1 Top FET 18 A Minimized Parasitic Inductances 30 V 10 m 4.5 V Optimized Devices to Reduce Power Losses Q2 Bottom 4.1 m 10 V 23 A These Devices are PbFree, Halogen Free/BFR Free and are RoHS FET 6.2 m 4.5 V 30 V Compliant D1 (2, 3, 4, 9) Applications DCDC Converters System Voltage Rails Point of Load (1) G1 S1/D2 (10) (8) G2 S2 (5, 6, 7) PIN CONNECTIONS D1 4 5 S2 D1 3 6 S2 9 10 D1 S1/D2 D1 2 7 S2 G1 1 8 G2 (Bottom View) MARKING DIAGRAM 1 4902NF DFN8 AYWZZ CASE 506BX 1 4902NF = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 5 NTMFD4902NF/DNTMFD4902NF MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage Q1 V 30 V DSS DraintoSource Voltage Q2 V 20 V GatetoSource Voltage Q1 GS GatetoSource Voltage Q2 Continuous Drain Current R (Note 1) T = 25C Q1 I 13.5 JA A D T = 85C 9.7 A A T = 25C Q2 17.5 A T = 85C 12.6 A Power Dissipation T = 25C Q1 P 1.90 W A D R JA (Note 1) Q2 1.99 Continuous Drain Current R 10 s (Note 1) T = 25C Q1 I 18.2 JA A D T = 85C 13.1 A A T = 25C Q2 23 A Steady State T = 85C 16.6 A Power Dissipation T = 25C Q1 P 3.45 W A D R 10 s (Note 1) JA Q2 3.45 Continuous Drain Current T = 25C Q1 I 10.3 A D R (Note 2) JA T = 85C 7.4 A A T = 25C Q2 13.3 A T = 85C 9.6 A Power Dissipation T = 25 C Q1 P 1.10 W A D R (Note 2) JA Q2 1.16 Pulsed Drain Current TA = 25C Q1 I 60 A DM tp = 10 s Q2 80 Operating Junction and Storage Temperature T , T 55 to +150 C Q1 J STG Q2 Source Current (Body Diode) Q1 I 3.4 A S Q2 4.9 Drain to Source dV/dt dV/dt 6.0 V/ns Single Pulse DraintoSource Avalanche Energy (T = 25C, 24 A Q1 EAS 28.8 mJ J V = 50 V, V = 10 V, I = XX A , L = 0.1 mH, R = 25 ) DD GS L pk G 27 A Q2 EAS 36.5 Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 sqin pad, 2 oz Cu. 2 2. Surfacemounted on FR4 board using the minimum recommended pad size of 100 mm . www.onsemi.com 2