NTMFS4C03N MOSFET Power, Single, N-Channel, SO-8FL 30 V, 2.1 m , 136 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 2.1 m 10 V 30 V Compliant 136 A 2.8 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit D (5,6) DraintoSource Voltage V 30 V DSS GatetoSource Voltage V 20 V GS Continuous Drain Cur- T = 25C I 136 A C D rent R (Notes 1, 3) G (4) JC Steady State Power Dissipation T = 25C P 64 W C D R (Notes 1, 3) JC S (1,2,3) Continuous Drain T = 25C I 30 A A D NCHANNEL MOSFET Current R JA Steady (Notes 1, 2, 3) State MARKING Power Dissipation T = 25C P 3.1 W A D R (Notes 1, 2, 3) DIAGRAM JA D Pulsed Drain Current T = 25C, t = 10 s I 352 A A p DM S D 1 Operating Junction and Storage Temperature T , T 55 to C J stg S 4C03N 150 SO8 FLAT LEAD S AYWZZ CASE 488AA Source Current (Body Diode) I 53 A G D S STYLE 1 D Single Pulse DraintoSource Avalanche E 549 mJ AS Energy (I = 11 A) L(pk) A = Assembly Location Y = Year Lead Temperature for Soldering Purposes T 260 C L W = Work Week (1/8 from case for 10 s) ZZ = Lot Traceability Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Device Package Shipping Parameter Symbol Value Unit NTMFS4C03NT1G SO8FL 1500 / JunctiontoCase Steady State (Note 2) R 1.95 C/W JC (PbFree) Tape & Reel JunctiontoAmbient Steady State (Note 2) R 40 JA NTMFS4C03NT3G SO8FL 5000 / 1. The entire application environment impacts the thermal resistance values shown, (PbFree) Tape & Reel they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. For information on tape and reel specifications, 3. Maximum current for pulses as long as 1 second is higher but is dependent including part orientation and tape sizes, please on pulse duration and duty cycle. refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: May, 2019 Rev. 2 NTMFS4C03N/DNTMFS4C03N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 18.2 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 1 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.8 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 1.5 2.1 DS(on) GS D m V = 4.5 V I = 30 A 2.2 2.8 GS D Forward Transconductance g V = 3 V, I = 30 A 136 S FS DS D Gate Resistance R T = 25 C 1.0 G A CHARGES AND CAPACITANCES Input Capacitance C 3071 ISS Output Capacitance C 1673 OSS V = 0 V, f = 1 MHz, V = 15 V pF GS DS Reverse Transfer Capacitance C 67 RSS Total Gate Charge Q 20.8 G(TOT) Threshold Gate Charge Q 4.9 G(TH) V = 4.5 V, V = 15 V I = 30 A nC GS DS D GatetoSource Charge Q 8.5 GS GatetoDrain Charge Q 4.7 GD Total Gate Charge Q V = 10 V, V = 15 V, 45.2 G(TOT) GS DS nC I = 30 A D SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 14 d(ON) Rise Time t 32 r V = 4.5 V, V = 15 V, I = 15 A, GS DS D ns R = 3.0 G TurnOff Delay Time t 27 d(OFF) Fall Time t 17 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.75 1.1 SD J V = 0 V, GS V I = 10 A S T = 125C 0.6 J Reverse Recovery Time t 47 RR Charge Time t 23 ns a V = 0 V, dI /dt = 100 A/ s, GS S I = 30 A S Discharge Time t 24 b Reverse Recovery Charge Q 39 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2