MOSFET Power, Single, N-Channel 100 V, 4.8 m , 132 A NTMFS6B03N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 100 V 4.8 m 10 V 132 A Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit D (5) DraintoSource Voltage V 100 V DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 132 A C D Current R JC G (4) T = 100C 83 (Notes 1, 2, 3) C Steady State Power Dissipation T = 25C P 165 W C D S (1,2,3) R (Notes 1, 2) JC T = 100C 65 C NCHANNEL MOSFET Continuous Drain T = 25C I 19 A A D Current R JA T = 100C 12 (Notes 1, 2, 3) A Steady MARKING State DIAGRAM Power Dissipation T = 25C P 3.4 W A D R (Notes 1 & 2) JA D T = 100C 1.4 A DFN5 (SO8FL) S D Pulsed Drain Current T = 25C, t = 10 s I 470 A A p DM 6B03N CASE 506EZ S Operating Junction and Storage Temperature T , T 55 to C AYWZZ J stg S + 150 G D 1 D Source Current (Body Diode) I 160 A S Single Pulse DraintoSource Avalanche E 180 mJ AS A = Assembly Location Energy (I = 60 A) L(pk) Y = Year W = Work Week Lead Temperature for Soldering Purposes T 260 C L ZZ = Lot Traceability (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL RESISTANCE MAXIMUM RATINGS See detailed ordering, marking and shipping information on Parameter Symbol Value Unit page 5 of this data sheet. JunctiontoCase Steady State R 0.76 C/W JC JunctiontoAmbient Steady State (Note 2) 38 R JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: April, 2021 Rev. 2 NTMFS6B03N/DNTMFS6B03N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 67.3 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 80 V A DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 8.1 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 20 A 3.8 4.8 DS(on) GS D m V = 6.0 V I = 10 A 6.0 7.8 GS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 4200 ISS Output Capacitance C 760 V = 0 V, f = 1 MHz, V = 50 V pF OSS GS DS Reverse Transfer Capacitance C 31 RSS Total Gate Charge Q 58 G(TOT) Threshold Gate Charge Q 6.2 G(TH) nC GatetoSource Charge Q 19 V = 10 V, V = 50 V I = 50 A GS GS DS D GatetoDrain Charge Q 17 GD Plateau Voltage V 5.4 V GP Gate Resistance R T = 25 C 1.0 G J SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 16 d(ON) Rise Time t 46 r V = 10 V, V = 50 V, GS DS ns I = 50 A, R = 1.0 D G TurnOff Delay Time t 29 d(OFF) Fall Time t 11 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.9 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.8 J Reverse Recovery Time t 67 RR Charge Time t 35 ns a V = 0 V, dI /d = 100 A/ s, GS S t I = 25 A S Discharge Time t 31 b Reverse Recovery Charge Q 120 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2