MOSFET - Power, Single N-Channel, DUAL COOL , DFN8 80 V, 4.0 m , 136 A NTMFSC004N08MC www.onsemi.com Features Advanced DualSided Cooled Packaging Ultra Low R to Minimize Conduction Losses DS(on) V R MAX I MAX SSS SS(ON) D MSL1 Robust Packaging Design 4.0 m 10 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS 80 V 136 A 8.5 m 6 V Compliant Typical Applications NChannel MOSFET Orring FET/Load Switching Synchronous Rectifier S 1 8 D DCDC Conversion S D 2 7 MAXIMUM RATINGS (T = 25C, Unless otherwise specified) J S 3 6 D Parameter Symbol Value Unit DraintoSource Voltage V 80 V DSS G 4 5 D GatetoSource Voltage V 20 V GS Continuous Drain I 136 A D Current R JC (Note 2) Steady T = 25C C State Power Dissipation P 127 W D R (Note 2) JC Continuous Drain I 80 A D Current R JA Steady (Note 1, 2) T = 25C A State Power Dissipation P 3.2 W D DFN8 5x6.15 R (Note 1, 2) JA CASE 506EG Pulsed Drain Current T = 25C, t = 10 s I 487 A A p DM Operating Junction and Storage Temperature T , T 55 to C J stg MARKING DIAGRAM Range +150 AWLYW Source Current (Body Diode) I 157 A S 4N08MC Single Pulse DraintoSource Avalanche E 178 mJ AS Energy (I = 55 A, L = 0.1 mH) AV Lead Temperature Soldering Reflow for Sol- T 300 C L dering Purposes (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 4N08MC= Specific Device Code assumed, damage may occur and reliability may be affected. A = Assembly Location 2 1. Surfacemounted on FR4 board using 1 in pad size, 1 oz Cu pad. WL = Wafer Lot 2. The entire application environment impacts the thermal resistance values shown, Y = Year they are not constants and are only valid for the particular conditions noted. W = Work Week ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: June, 2021 Rev. 3 NTMFSC004N08MC/DNTMFSC004N08MC THERMAL CHARACTERISTICS Symbol Parameter Max Unit R JunctiontoCase Steady State 0.98 C/W JC R JunctiontoCase Top Steady State 1.49 JT R JunctiontoAmbient Steady State (Note 1) 39 JA ORDERING INFORMATION Device Device Marking Package Shipping NTMFSC004N08MC 4N08MC DFN8 5x6.15 3000 / Tape & Reel (PbFree/Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage V V = 0 V, I = 250 A 80 V (BR)DSS GS D Drain to Source Breakdown Voltage V / T 0.05 mV/C (BR)DSS J I = 250 A, ref to 25C D Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 10 A DSS J V = 0 V, V = 80 V GS DS T = 125C 250 J Gate to Source Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) V Gate Threshold Voltage V = V , I = 250 A 2.0 2.9 4.0 V GS(TH) GS DS D V / T Negative Threshold Temperature 6.5 mV/C GS(TH) J I = 250 A, ref to 25C D Coefficient R Drain to Source On Resistance V = 10 V, I = 44 A 3.1 4.0 m DS(on) GS D V = 6 V, I = 22 A 5.0 8.5 GS D GateResistance R T = 25C 1.3 G A CHARGES & CAPACITANCES C Input Capacitance 2980 pF ISS C Output Capacitance 950 V = 0 V, f = 1 MHz, V = 40 V OSS GS DS C Reverse Transfer Capacitance 50 RSS Q Total Gate Charge V = 6 V, V = 40 V, I = 22 A 27.8 nC G(TOT) GS DS D Q Total Gate Charge 43.4 G(TOT) Q GatetoSource Charge 15 V = 10 V, V = 40 V, I = 22 A GS GS DS D Q GatetoDrain Charge 7 GD SWITCHING CHARACTERISTICS (Note 3) t Turn On Delay Time d(ON) 11.7 ns Rise Time t 21.5 r V = 10 V, V = 40 V, GS DS t I = 44 A, R = 2.5 Turn Off Delay Time d(OFF) D G 28.7 Fall Time t 5.4 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.83 1.30 V SD J V = 0 V, I = 44 A GS S T = 125C 0.69 J Reverse Recovery Time t 44 ns RR V = 0 V, dI /dt = 100 A/ s, GS S I = 44 A Reverse Recovery Charge Q S 50 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2