4801N AYWW NTMS4801N MOSFET Power, N-Channel, SO-8 30 V, 12 A Features NTMS4801N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit C/W JunctiontoAmbient Steady State (Note 1) R 88.5 JA JunctiontoAmbient t 10 s (Note 1) R 60.5 JA JunctiontoFoot (Drain) R 23 JF JunctiontoAmbient Steady State (Note 2) R 156 JA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surfacemounted on FR4 board using 1 in sq pad size. 2. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 7.0 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, V = 24 V GS DS T = 85C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V 1.0 2.5 V V = V , I = 250 A GS(TH) GS DS D Negative Threshold Temperature V /T 6.0 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V, I = 12 A 7.0 9.0 m DS(on) GS D V = 4.5 V, I = 10 A 9.5 12.5 GS D Forward Transconductance g V = 1.5 V, I = 12 A 26 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 1630 2201 pF iss Output Capacitance C 288 389 V = 0 V, f = 1.0 MHz, V = 25 V oss GS DS Reverse Transfer Capacitance C 150 225 rss Total Gate Charge Q 12.2 14 nC G(TOT) Threshold Gate Charge Q 1.8 G(TH) V = 4.5 V, V = 15 V, I = 12 A GS DS D GatetoSource Charge Q 5.1 GS GatetoDrain Charge Q 4.4 GD Total Gate Charge Q V = 10 V, V = 15 V, I = 12 A 25 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 10.5 ns d(on) Rise Time t 3.7 r V = 10 V, V = 15 V, GS DS I = 1.0 A, R = 6.0 D G TurnOff Delay Time t 29 d(off) Fall Time t 9.8 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.73 1.0 V SD J V = 0 V, I = 2.1 A GS S T = 125C 0.6 J