NTMS5835NLR2G ON Semiconductor

5835NL AYWW NTMS5835NL Power MOSFET 40 V, 12 A, 10 m Features Low R DS(on) Low Capacitance NTMS5835NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 16 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 1 DSS GS J V = 40 V A DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.0 1.85 3.0 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 7.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V, I = 10 A 8.2 10 DS(on) GS D m V = 4.5 V, I = 10 A 10.3 14 GS D Forward Transconductance g V = 15 V, I = 10 A 10 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 2115 ISS Output Capacitance C 315 V = 0 V, f = 1 MHz, V = 20 V pF OSS GS DS Reverse Transfer Capacitance C 220 RSS Total Gate Charge Q V = 10 V, V = 20 V I = 10 A 40 50 G(TOT) GS DS D 20 23 Threshold Gate Charge Q 2.0 nC G(TH) GatetoSource Charge Q 7.0 V = 4.5 V, V = 20 V I = 10 A GS GS DS D GatetoDrain Charge Q 9.5 GD Plateau Voltage V 3.3 V GP Gate Resistance R 1.2 G SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 15 d(ON) Rise Time t 45 r V = 4.5 V, V = 20 V, GS DS ns I = 10 A, R = 2.5 D G Turn Off Delay Time t 22 d(OFF) Fall Time t 9.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.9 1.2 SD J V = 0 V, GS V I = 10 A S T = 125C 0.785 J Reverse Recovery Time t 26 RR Charge Time t 13 a ns V = 0 V, dIS/dt = 100 A/ s, GS I = 10 A S Discharge Time t 13 b Reverse Recovery Charge Q 17 nC RR 3. Pulse Test: pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.