X-On Electronics has gained recognition as a prominent supplier of NTMS5P02R2G MOSFET across the USA, India, Europe, Australia, and various other global locations. NTMS5P02R2G MOSFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

NTMS5P02R2G ON Semiconductor

NTMS5P02R2G electronic component of ON Semiconductor
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See Product Specifications
Part No.NTMS5P02R2G
Manufacturer: ON Semiconductor
Category: MOSFET
Description: MOSFET -20V -5.4A P-Channel
Datasheet: NTMS5P02R2G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5968 ea
Line Total: USD 0.6

Availability - 2493
Ship by Wed. 07 Aug to Fri. 09 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
25
Ship by Thu. 08 Aug to Tue. 13 Aug
MOQ : 1
Multiples : 1
1 : USD 0.6921
10 : USD 0.5665
30 : USD 0.5027
100 : USD 0.4409
500 : USD 0.4034
1000 : USD 0.3827

2493
Ship by Wed. 07 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 0.5968
10 : USD 0.5232
100 : USD 0.4612
500 : USD 0.4267
1000 : USD 0.3864
2500 : USD 0.3806
25000 : USD 0.3726

2397
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 18
Multiples : 1
18 : USD 0.4802
25 : USD 0.4727
100 : USD 0.4651
250 : USD 0.4576
500 : USD 0.4502
1000 : USD 0.4426

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
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Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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Rise Time
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Typical Turn-Off Delay Time
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We are delighted to provide the NTMS5P02R2G from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTMS5P02R2G and other electronic components in the MOSFET category and beyond.

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NTMS5P02, NVMS5P02 MOSFET Power, Single, P-Channel, Enhancement Mode, SOIC-8 -5.4 A, -20 V NTMS5P02, NVMS5P02 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit DraintoSource Voltage V 20 V DSS DraintoGate Voltage (R = 1.0 m ) V 20 V GS DGR GatetoSource Voltage Continuous V 10 V GS Thermal Resistance JunctiontoAmbient (Note 1) R 50 C/W JA Total Power Dissipation T = 25C P 2.5 W A D Continuous Drain Current 25C 7.05 A I D Continuous Drain Current 70C I 5.62 A D Maximum Operating Power Dissipation P 1.2 W D Maximum Operating Drain Current I 4.85 A D Pulsed Drain Current (Note 4) I 28 A DM Thermal Resistance JunctiontoAmbient (Note 2) R 85 C/W JA Total Power Dissipation T = 25C P 1.47 W A D Continuous Drain Current 25C I 5.40 A D Continuous Drain Current 70C I 4.30 A D Maximum Operating Power Dissipation P 0.7 W D Maximum Operating Drain Current I 3.72 A D Pulsed Drain Current (Note 4) I 20 A DM Thermal Resistance JunctiontoAmbient (Note 3) R 159 C/W JA Total Power Dissipation T = 25C P 0.79 W A D Continuous Drain Current 25C I 3.95 A D Continuous Drain Current 70C I 3.15 A D Maximum Operating Power Dissipation P 0.38 W D Maximum Operating Drain Current I 2.75 A D Pulsed Drain Current (Note 4) 12 A I DM Operating and Storage Temperature Range T , T 55 to +150 C J stg Single Pulse DraintoSource Avalanche Energy Starting T = 25C E 360 mJ J AS (V = 20 Vdc, V = 5.0 Vdc, Peak I = 8.5 Apk, L = 10 mH, R = 25 ) DD GS L G Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T 260 C L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted onto a 2 square FR4 Board (1 sq. 2 oz Cu 0.06 thick single sided), t 10 seconds. 2. Mounted onto a 2 square FR4 Board (1 sq. 2 oz Cu 0.06 thick single sided), t = steady state. 3. Minimum FR4 or G10 PCB, t = Steady State. 4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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