NTR0202PL, NVTR0202PL MOSFET Power, P-Channel, SOT-23 -20 V, -400 mA Features www.onsemi.com Low R Provides Higher Efficiency and Extends Battery Life DS(on) R = 0.80 , V = 10 V DSon GS V R Typ I MAX (BR)DSS DS(on) D R = 1.10 , V = 4.5 V DSon GS 20 V 550 m 10 V 400 mA Miniature SOT23 Surface Mount Package Saves Board Space NVT Prefix for Automotive and Other Applications Requiring PChannel Unique Site and Control Change Requirements AECQ101 D Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant Applications DCDC Converters G Computers Printers S PCMCIA Cards Cellular and Cordless Telephones MARKING DIAGRAM & PIN ASSIGNMENT Drain MAXIMUM RATINGS (T = 25C unless otherwise noted) J 3 Rating Symbol Value Unit PL M DraintoSource Voltage V 20 V DSS SOT23 GatetoSource Voltage Continuous V 20 V GS CASE 318 Continuous Drain Current T = 25C I 0.4 A 1 2 A D STYLE 21 Gate Source Pulsed Drain Current (t 10 s) I 1.0 p DM Total Power Dissipation T = 25C (Note 1) P 225 mW A D PL = Specific Device Code M = Date Code* Operating and Storage Temperature Range T , T 55 to C J stg = PbFree Package 150 (Note: Microdot may be in either location) Thermal Resistance JunctiontoAmbient 556 C/W R JA *Date Code orientation may vary depending upon manufacturing location. Source Current (Body Diode) I 0.4 A S Maximum Lead Temperature for Soldering T 260 C L ORDERING INFORMATION Purposes, 1/8 from case for 10 s Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be NTR0202PLT1G SOT23 3000 / Tape & assumed, damage may occur and reliability may be affected. (PbFree) Reel 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. NTR0202PLT3G SOT23 10000 / Tape & (PbFree) Reel NVTR0202PLT1G SOT23 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2003 1 Publication Order Number: June, 2019 Rev. 6 NTR0202PL/DNTR0202PL, NVTR0202PL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V (BR)DSS (V = 0 V, I = 10 A) 20 V GS D (Positive Temperature Coefficient) 33 mV/C Zero Gate Voltage Drain Current I A DSS (V = 20 V, V = 0 V, T = 25C) 1.0 DS GS J (V = 20 V, V = 0 V, T = 150C) 10 DS GS J GateBody Leakage Current (V = 20 V, V = 0 V) I 100 nA GS DS GSS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V GS(th) (V = V , I = 250 A) 1.1 1.9 2.3 V DS GS D (Negative Temperature Coefficient) 3.0 mV/C Static DraintoSource OnResistance R DS(on) (V = 10 V, I = 200 mA) 0.55 0.80 GS D (V = 4.5 V, I = 50 mA) 0.80 1.10 GS D Forward Transconductance g 0.5 Mhos fs (V = 10 V, I = 200 mA) DS D DYNAMIC CHARACTERISTICS pF Input Capacitance C 70 iss (V = 5.0 V, V = 0 V, DS GS Output Capacitance C 74 oss F = 1.0 MHz) Reverse Transfer Capacitance C 26 rss SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 3.0 ns d(on) Rise Time t 6.0 r (V = 15 V, I = 200 mA, DD D V = 10 V, R = 6.0 ) GS G TurnOff Delay Time t 18 d(off) Fall Time t 4 f Total Gate Charge Q 2.18 nC TOT (V = 15 V, I = 200 mA, DS D GateSource Charge Q 0.41 GS V = 10 V) GS GateDrain Charge Q 0.40 GD BODYDRAIN DIODE CHARACTERISTICS (Note 2) Diode Forward Voltage (Note 2) V V SD (I = 400 mA, V = 0 V) 0.8 1.0 S GS (I = 400 mA, V = 0 V, T = 150C) 0.65 S GS J Reverse Recovery Time t 11.8 ns rr (I = 1.0 A, V = 0 V, S GS t 9 a dI /dt = 100 A/ s) S t 3 b Reverse Recovery Stored Charge (I = 1.0 A, V = 0 V, Q 0.007 C S GS RR dI /dt = 100 A/ s) S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperature. www.onsemi.com 2