NTR5103NT1G ON Semiconductor

NTR5103N MOSFET Single, N-Channel, Small Signal, SOT-23 60 V, 310 mA NTR5103N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 75 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1 A DSS J V = 0 V, GS V = 60 V T = 125C 500 DS J GatetoSource Leakage Current I V = 0 V, V = 30 V 200 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 1.9 2.6 V GS(TH) GS DS D Negative Threshold Temperature V /T 4.4 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V, I = 240 mA 1.0 2.5 DS(on) GS D V = 4.5 V, I = 50 mA 1.4 3.0 GS D Forward Transconductance g V = 5 V, I = 200 mA 530 mS FS DS D CHARGES AND CAPACITANCES Input Capacitance C 26.7 40 pF ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 4.6 OSS V = 25 V DS Reverse Transfer Capacitance C 2.9 RSS Total Gate Charge Q 0.81 nC G(TOT) Threshold Gate Charge Q 0.31 G(TH) V = 5 V, V = 10 V GS DS I = 240 mA D GatetoSource Charge Q 0.48 GS GatetoDrain Charge Q 0.08 GD SWITCHING CHARACTERISTICS, V = V (Note 3) GS TurnOn Delay Time t 1.7 ns d(ON) Rise Time t 1.2 r V = 10 V, V = 30 V, GS DD I = 200 mA, R = 10 TurnOff Delay Time t 4.8 D G d(OFF) Fall Time t 3.6 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.79 1.2 V SD J V = 0 V, GS I = 200 mA T = 85C 0.7 S J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width 300 s, duty cycle 2% 3. Switching characteristics are independent of operating junction temperatures