X-On Electronics has gained recognition as a prominent supplier of NTND31225CZTAG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTND31225CZTAG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTND31225CZTAG ON Semiconductor

NTND31225CZTAG electronic component of ON Semiconductor
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See Product Specifications
Part No.NTND31225CZTAG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET T1 XLLGA6 DUAL
Datasheet: NTND31225CZTAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9838 ea
Line Total: USD 0.98 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 8000
Multiples : 8000
8000 : USD 0.0924
16000 : USD 0.0915
24000 : USD 0.0907

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9838
10 : USD 0.8026
100 : USD 0.2196
500 : USD 0.1647
1000 : USD 0.1232
2500 : USD 0.1067
8000 : USD 0.0984
24000 : USD 0.0953

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTND31225CZTAG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTND31225CZTAG and other electronic components in the MOSFETs category and beyond.

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NTND31225CZ MOSFET Small Signal, Complementary, XLLGAS6, 0.65mm x 0.90mm x 0.4mm 20 V www.onsemi.com Features Advanced Trench Complementary MOSFET V R MAX I Max (BR)DSS DS(ON) D Offers a Low R Solution in the Ultra Small 1.5 4.5 V DS(ON) 0.65 mm 0.90 mm Package 2.0 2.5 V NChannel 220 mA 20 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS 3.0 1.8 V Compliant 4.5 1.5 V 5.0 4.5 V Applications 6.0 2.5 V PChannel Small Signal Load Switch with Level Shift 127 mA 20 V 7.0 1.8 V Analog Switch 10.0 1.5 V High Speed Interfacing Optimized for Power Management in Ultra Portable Products DEVICE SYMBOL D1 S2 MAXIMUM RATINGS (T = 25C unless otherwise specified) J Parameter Symbol Value Unit G1 G2 Drain-to-Source Voltage NMOS V 20 V DSS PMOS 20 Gate-to-Source Voltage NMOS V 8 V GSS PMOS 8 S1 D2 NMOS PMOS NChannel Steady T = 25C I 220 mA A D Continuous Drain State T = 85C 158 A Current (Note 1) MARKING DIAGRAM t 5 s T = 25C 253 A PChannel Steady T = 25C I 127 mA L M A D Continuous Drain State XLLGA6 T = 85C 91 A Current (Note 1) Case 713AC 1 t 5 s T = 25C 146 L = Specific Device Code A M = Date Code Power Dissipation Steady T = 25C P 125 mW A D (Note 1) State PINOUT DIAGRAM t 5 s 166 Pulsed Drain Current NMOS t = 10 s I 846 mA p DM S1 1 6 D1 PMOS 488 Source Current (Body Diode) I 200 mA S G1 2 5 G2 200 Operating Junction and Storage Temperature T , 55 to C J D2 3 T 150 4 S2 STG Lead Temperature for Soldering Purposes T 260 C L (Bottom View) (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information on page 4 of assumed, damage may occur and reliability may be affected. this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2019 Rev. 0 NTND31225CZ/DNTND31225CZ 1. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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