NTND31225CZTAG ON Semiconductor

NTND31225CZ MOSFET Small Signal, Complementary, XLLGAS6, 0.65mm x 0.90mm x 0.4mm 20 V www.onsemi.com Features Advanced Trench Complementary MOSFET V R MAX I Max (BR)DSS DS(ON) D Offers a Low R Solution in the Ultra Small 1.5 4.5 V DS(ON) 0.65 mm 0.90 mm Package 2.0 2.5 V NChannel 220 mA 20 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS 3.0 1.8 V Compliant 4.5 1.5 V 5.0 4.5 V Applications 6.0 2.5 V PChannel Small Signal Load Switch with Level Shift 127 mA 20 V 7.0 1.8 V Analog Switch 10.0 1.5 V High Speed Interfacing Optimized for Power Management in Ultra Portable Products DEVICE SYMBOL D1 S2 MAXIMUM RATINGS (T = 25C unless otherwise specified) J Parameter Symbol Value Unit G1 G2 Drain-to-Source Voltage NMOS V 20 V DSS PMOS 20 Gate-to-Source Voltage NMOS V 8 V GSS PMOS 8 S1 D2 NMOS PMOS NChannel Steady T = 25C I 220 mA A D Continuous Drain State T = 85C 158 A Current (Note 1) MARKING DIAGRAM t 5 s T = 25C 253 A PChannel Steady T = 25C I 127 mA L M A D Continuous Drain State XLLGA6 T = 85C 91 A Current (Note 1) Case 713AC 1 t 5 s T = 25C 146 L = Specific Device Code A M = Date Code Power Dissipation Steady T = 25C P 125 mW A D (Note 1) State PINOUT DIAGRAM t 5 s 166 Pulsed Drain Current NMOS t = 10 s I 846 mA p DM S1 1 6 D1 PMOS 488 Source Current (Body Diode) I 200 mA S G1 2 5 G2 200 Operating Junction and Storage Temperature T , 55 to C J D2 3 T 150 4 S2 STG Lead Temperature for Soldering Purposes T 260 C L (Bottom View) (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information on page 4 of assumed, damage may occur and reliability may be affected. this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2019 Rev. 0 NTND31225CZ/DNTND31225CZ 1. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. www.onsemi.com 2