xJ SiC Series... 60mW - 1200V SiC Cascode... UJC1206K... Features Low On-Resistance R of 0.06W DS(on)max TAB Standard 12V gate drive Maximum operating temperature of 150C Excellent Reverse Recovery Low gate charge Low intrinsic capacitance RoHS compliant Typical Applications 1 EV Charging 2 3 PV Inverters Part Number Package Marking Switch Mode Power Supplies Power Factor Correction Modules UJC1206K TO-247 UJC1206K Motor Drives Induction Heating Descriptions United Silicon Carbide s cascode products co-package its xJ series high-performance SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low on resistance and gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive. Maximum Ratings Parameter Test Conditions Value Symbol Units Drain-Source Voltage V 1200 V DS Gate-Source Voltage V DC -20 to +20 V GS T = 25C Continuous Drain Current I 35 A D C Continuous Drain Current I T = 100C 22.5 A D C T = 25C 110 j I Pulsed Drain Current A DM T = 150C 85 j 1 t V =15V, V <600V 4 Short-Circuit Withstand Time ms SC GS CC 1 E L=15mH, I =4.2A 143 Single Pulsed Avalanche Energy mJ AS AS T = 25C Power Dissipation P 192 W C tot Operating and Storage Temperature T , T -55 to 150 C J STG Max Lead Temperature for Soldering, T 250 C L 1/8 from Case for 5 Seconds Starting T = 25C 1 J Preliminary xJ SiC Series... 60mW - 1200V SiC Cascode... UJC1206K... Electrical Characteristics (T = +25C unless otherwise specified) J Typical Performance - Static Value Parameter Symbol Test Conditions Units Min Typ Max V =0V, I =1mA Drain-Source Breakdown Voltage BV 1200 V GS D DS V = 1200V, DS 200 500 V = 0V, T = 25C GS J I Total Drain Leakage Current mA D V = 1200V, DS 500 V = 0V, T = 150C GS J V =0V, T =25C DS j Total Gate Leakage Current I 6 100 nA G V =-20V/+20V GS V =12V, I =20A, GS F 42 60 T = 25C J Drain-Source On-Resistance R mW DS(on) V =12V, I =20A, GS F 105 150 T = 150C J Gate Threshold Voltage V V = 5V, I =250mA 4.5 V G(th) DS D Gate Resistance R V = 0V, f = 1MHz 1.2 W G GS Typical Performance - Reverse Diode Value Parameter Symbol Test Conditions Units Min Typ Max V = 0V, I = 20A, GS F - 1.5 T = 25C J V Forward Voltage V FSD V = 0V, I = 20A, GS F 2.3 T =150C - J V =800V, I =20A, R F Reverse Recovery Charge Q 120 nC rr di/dt=1100A/ms Preliminary