xR SiC Series 10A - 650V SiC Schottky Diode UJD06510TS . Datasheet . Description CASE United Silicon Carbide, Inc. offers the xR series of high performance SiC CASE Schottky diodes. With zero reverse recovery charge and 175C maximum junction temperature, USCis diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. 1 2 1 2 Part Number Package Marking UJD06510TS TO-220-2L UJD06510TS Features Typical Applications Positive temperature coefficient for safe operation and ease of w w Power converters paralleling w Industrial motor drives w w 175C maximum operating junction temperature Switching-mode power supplies w Extremely fast switching not dependent on temperature w Power factor correction modules Essentially no reverse or forward recovery w w Enhanced surge capability w RoHS compliant Maximum Ratings Parameter Test Conditions Value Symbol Units DC blocking voltage V 650 V R Repetitive peak reverse voltage, T =25C j V 650 V RRM Surge peak reverse voltage V 650 V RSM Maximum DC forward current I T = 147C 10 C A F T = 25C, t = 10ms 70 C p Non-repetitive forward surge current I A FSM sine halfwave T = 110C, t =10ms 60 C p T = 25C, t = 10ms 44.3 C p Repetitive forward surge current I A FRM sine halfwave, D=0.1 T = 110C, t =10ms 26.7 C p T = 25C, t =10ms C p 455 Non-repetitive peak forward current I A F,max T = 110C, t =10ms C p 410 T = 25C, L = 5mH, j Non-repetitive avalanche energy E 84 mJ AS Ipk=5.5A, V =100V DD T = 25C 125 C P Power dissipation W Tot T = 147C 23 C Maximum junction temperature T 175 C J,max T , T Operating and storage temperature -55 to 175 C J STG Soldering temperatures, wavesoldering only 1.6mm from case for T 260 C sold allowed at leads 10s Rev. B, November 2016 1 For more information go to www.unitedsic.com. xR SiC Series 10A - 650V SiC Schottky Diode UJD06510TS . Datasheet . Electrical Characteristics T = +25C unless otherwise specified J Value Parameter Symbol Test Conditions Units Min Typ Max I = 10A, T = 25C - 1.5 1.7 F J V Forward voltage I = 10A, T =150C V F - 1.8 2.1 F J I = 10A, T =175C - 1.95 2.25 F J V =650V, T =25C - 25 250 R j Reverse current I mA R V =650V, T =175C - 50 800 R J (1) Q V =400V Total capacitive charge 19 nC C R V =1V, f=1MHz 290 R V =300V, f=1MHz Total capacitance C 31 pF R V =600V, f=1MHz 28 R Capacitance stored energy E V =400V 2.9 mJ C R (1) See Figure 8, Q is independent on T , di /dt, and I as shown in the application note USCi AN0011. c j F F Thermal characteristics Value Parameter symbol Test Conditions Units Min Typ Max Thermal resistance R 0.9 1.2 C/W qJC Typical Performance -4 1.E-04 20 10 - 55C -5 25C 1.E-05 10 15 175C -6 1.E10-06 10 -7 - 55C 1.E10-07 25C 100C 5 -8 10 1.E-08 150C 175C -9 10 1.E-09 0 200 250 300 350 400 450 500 550 600 650 0 1 2 3 4 Reverse Voltage, V (V) Forward Voltage, V (V) R F Figure 1 Typical reverse characteristics Figure 2 Typical forward characteristics Rev. B, November 2016 2 For more information go to www.unitedsic.com. Reverse Current, I (A) R Forward Current, I (A) F