UJN1205K UnitedSiC

xJ SiC Series... 45mW - 1200V SiC Normally-On JFET... UJN1205K... Features CASE Low On-Resistance R of 0.045 W DS(on)max CASE Voltage controlled Maximum operating temperature of 175C Extremely fast switching not dependent on temperature Low gate charge Low intrinsic capacitance Typical Applications 1 2 3 Over Current Protection Circuits DC-AC Inverters Switch Mode Power Supplies Part Number Package Marking UJN1205K TO-247 UJN1205K Power Factor Correction Modules Motor Drives Induction Heating Descriptions United Silicon Carbide, Inc offers the xJ series of high-performance SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (R ) and gate charge (Qg) allowing for low conduction and switching loss. DS(ON) The device normally-on characteristics with low R at V = 0 V is also ideal for current protection circuits DS(ON) GS without the need for active control, as well as for cascode operation. Absolute Maximum Ratings Parameter Symbol Test Conditions Value Units Drain-Source Voltage V 1200 V DS DC -20 to +3 V Gate-Source Voltage V GS (1) -20 to +20 AC Continuous Drain Current I T = 25C 38 A D C Continuous Drain Current I T = 125C 23 A D C T = 125C 80 j I Pulsed Drain Current A DM T = 175C 55 j P T = 25C 230 Power Dissipation W tot C T , T Operating and Storage Temperature -55 to 175 C J STG Max Lead Temperature for Soldering, T 250 C L 1/8 from Case for 5 Seconds (1) +20V AC rating applies for turn-on pulses <200ns applied with external R > 1 W. G Rev 1.0 1 xJ SiC Series... 45mW - 1200V SiC Normally-On JFET... UJN1205K... Electrical Characteristics (T = +25C unless otherwise specified) J Typical Performance - Static Value Parameter Symbol Test Conditions Units Min Typ Max V =-20V, I =1mA Drain-Source Breakdown Voltage BV 1200 V GS D DS V = 1200V, DS 10 500 V = -20V, T = 25C GS J I Total Drain Leakage Current mA D V = 1200V, DS 30 1500 V = -20V, T = 175C GS J V =-20V, T =25C 1 250 GS j Total Gate Leakage Current I mA G V =-20V, T =175C 10 GS j V =2V, I =30A, GS F 35 45 T = 25C J V =0V, I =20A, GS F 42 55 T = 25C J R Drain-Source On-Resistance m W DS(on) V =2V, I =30A, GS F 105 135 T = 175C J V =0V, I =20A, GS F 135 165 T = 175C J V = 5V, I = 70mA Gate Threshold Voltage V -10 -6 -4 V DS D G(th) R V = 0V, f = 1MHz Gate Resistance 5 W GS G Rev 1.0 2