X-On Electronics has gained recognition as a prominent supplier of UJN1205K JFET across the USA, India, Europe, Australia, and various other global locations. UJN1205K JFET are a product manufactured by UnitedSiC. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

UJN1205K UnitedSiC

UJN1205K electronic component of UnitedSiC
UJN1205K UnitedSiC
UJN1205K JFET
UJN1205K  Semiconductors

Images are for reference only
See Product Specifications
Part No. UJN1205K
Manufacturer: UnitedSiC
Category: JFET
Description: JFET 1200V/45mOhm SiC JFET N-ON
Datasheet: UJN1205K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 34.1673
5 : USD 32.6307
10 : USD 31.6108
25 : USD 29.9754
50 : USD 29.9754
100 : USD 28.9994
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 31.4223
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Minimum Operating Temperature
Maximum Operating Temperature
Type
Brand
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UJN1205K from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UJN1205K and other electronic components in the JFET category and beyond.

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xJ SiC Series... 45mW - 1200V SiC Normally-On JFET... UJN1205K... Features CASE Low On-Resistance R of 0.045 W DS(on)max CASE Voltage controlled Maximum operating temperature of 175C Extremely fast switching not dependent on temperature Low gate charge Low intrinsic capacitance Typical Applications 1 2 3 Over Current Protection Circuits DC-AC Inverters Switch Mode Power Supplies Part Number Package Marking UJN1205K TO-247 UJN1205K Power Factor Correction Modules Motor Drives Induction Heating Descriptions United Silicon Carbide, Inc offers the xJ series of high-performance SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (R ) and gate charge (Qg) allowing for low conduction and switching loss. DS(ON) The device normally-on characteristics with low R at V = 0 V is also ideal for current protection circuits DS(ON) GS without the need for active control, as well as for cascode operation. Absolute Maximum Ratings Parameter Symbol Test Conditions Value Units Drain-Source Voltage V 1200 V DS DC -20 to +3 V Gate-Source Voltage V GS (1) -20 to +20 AC Continuous Drain Current I T = 25C 38 A D C Continuous Drain Current I T = 125C 23 A D C T = 125C 80 j I Pulsed Drain Current A DM T = 175C 55 j P T = 25C 230 Power Dissipation W tot C T , T Operating and Storage Temperature -55 to 175 C J STG Max Lead Temperature for Soldering, T 250 C L 1/8 from Case for 5 Seconds (1) +20V AC rating applies for turn-on pulses <200ns applied with external R > 1 W. G Rev 1.0 1 xJ SiC Series... 45mW - 1200V SiC Normally-On JFET... UJN1205K... Electrical Characteristics (T = +25C unless otherwise specified) J Typical Performance - Static Value Parameter Symbol Test Conditions Units Min Typ Max V =-20V, I =1mA Drain-Source Breakdown Voltage BV 1200 V GS D DS V = 1200V, DS 10 500 V = -20V, T = 25C GS J I Total Drain Leakage Current mA D V = 1200V, DS 30 1500 V = -20V, T = 175C GS J V =-20V, T =25C 1 250 GS j Total Gate Leakage Current I mA G V =-20V, T =175C 10 GS j V =2V, I =30A, GS F 35 45 T = 25C J V =0V, I =20A, GS F 42 55 T = 25C J R Drain-Source On-Resistance m W DS(on) V =2V, I =30A, GS F 105 135 T = 175C J V =0V, I =20A, GS F 135 165 T = 175C J V = 5V, I = 70mA Gate Threshold Voltage V -10 -6 -4 V DS D G(th) R V = 0V, f = 1MHz Gate Resistance 5 W GS G Rev 1.0 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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