Product Technical OrOrdderer Folder Support NowNow InterFET 2N5397-8 2N5397, 2N5398 N-Channel JFET Features TO-72 Bottom View InterFET N0026L Geometry Gate 3 Low Noise: 3 nV/Hz Typical Low Ciss: 5.0pF Typical Drain 2 4 Case Low Leakage: 10pA Typical RoHS Compliant Source 1 SMT, TH, and Bare Die Package options. Applications SOT23 Top View Low Noise High Power Gain Source 1 High Transconductance Mixers Gate 3 Oscillators Drain 2 VHF Amplifiers Description TO-92 Bottom View The -25V InterFET 2N5397 and 2N5398 are targeted for low noise amplifier stages as well as mixer and oscillator designs. Gate leakages are Gate 3 typically less than 10pA at room temperatures. Drain 2 The TO-72 package is hermetically sealed and suitable for military applications. Source 1 Product Summary Parameters 2N5397 Min 2N5398 Min Unit BVGSS Gate to Source Breakdown Voltage -25 -25 V IDSS Drain to Source Saturation Current 10 5 mA VGS(off) Gate to Source Cutoff Voltage -1 -1 V G Forward Transconductance 5.5 5 mS FS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N5397 2N5398 Through-Hole TO-72 Bulk PN5397 PN5398 Through-Hole TO-92 Bulk SMP5397 SMP5398 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP5397TR SMP5398TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel 2N5397COT 2N5398COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack 2N5397CFT 2N5398CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35029.R00Product Technical OrOrdderer Folder Support NowNow InterFET 2N5397-8 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -25 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 1.7 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) 2N5397 2N5398 Parameters Conditions Min Max Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -25 -25 V Breakdown Voltage Gate to Source V = -15V, V = 0V, T = 25C -0.1 -0.1 nA GS DS A IGSS Reverse Current V = -15V, V = 0V, T = 150C -0.1 -0.1 A GS DS A Gate to Source VGS(F) VDS = 0V, IG = 1mA 1 1 V Forward Voltage Gate to Source VGS(OFF) VDS = 10V, ID = 1nA -1 6 -1 -6 V Cutoff Voltage Drain to Source V = 0V, V = 10V GS DS IDSS 10 30 5 40 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) 2N5397 2N5398 Parameters Conditions Min Max Min Max Unit Forward GFS VDS = 10V, ID = 10mA, f = 450MHz 5.5 9 5 10 mS Transconductance Output G V = 10V, I = 10mA, f = 450MHz 0.4 0.5 mS OS DS D Conductance Input GIS VDS = 10V, ID = 10mA, f = 450MHz 2 3 mS Conductance Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz 5 5.5 pF Reverse Transfer C V = 15V, V = 0V, f = 1MHz 1.2 1.3 pF rss DS GS Capacitance RF Parameters guaranteed, but not 100% tested. 2N5397-8 2 of 5 InterFET Corporation Document Number: IF35029.R00 www.InterFET.com December, 2018