Gen-III 4A - 650V SiC Schottky Diode UJ3D06504TS . Datasheet . Description CASE rd United Silicon Carbide, Inc. offers the 3 generation of high CASE performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. 1 2 1 2 Part Number Package Marking UJ3D06504TS TO-220-2L UJ3D06504TS Features Typical Applications 175C maximum operating junction temperature w w Power converters w Easy paralleling w Industrial motor drives w Extremely fast switching not dependent on temperature w Switching-mode power supplies w No reverse or forward recovery w Power factor correction modules Enhanced surge current capability, MPS structure w Excellent thermal performance, Ag sintered w w 100% UIS tested w AEC-Q101 qualified Maximum Ratings Parameter Symbol Test Conditions Value Units DC blocking voltage V 650 V R Repetitive peak reverse voltage, T =25C V 650 V j RRM Surge peak reverse voltage V 650 V RSM Maximum DC forward current I T = 156C 4 A F C T = 25C, t = 10ms Non-repetitive forward surge current 29 C p I A FSM sine halfwave T = 110C, t =10ms 26 C p T = 25C, t = 10ms 23.2 Repetitive forward surge current C p I A FRM sine halfwave, D=0.1 T = 110C, t =10ms 13.6 C p T = 25C, t =10ms 260 C p I Non-repetitive peak forward current A F,max T = 110C, t =10ms 260 C p T = 25C, t =10ms 4.2 C p 2 2 2 i t value i dt A s T = 110C, t =10ms 3.4 C p T = 25C 71.4 C P Power dissipation W Tot T = 156C 9 C Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Soldering temperatures, wavesoldering only 1.6mm from case for T 260 C sold allowed at leads 10s Rev. C, December 2018 1 For more information go to www.unitedsic.com. Gen-III 4A - 650V SiC Schottky Diode UJ3D06504TS . Datasheet . Electrical Characteristics T = +25C unless otherwise specified J Value Parameter Symbol Test Conditions Units Min Typ Max I =4A, T =25C - 1.5 1.7 F J V Forward voltage I =4A, T =150C V F - 1.9 2.1 F J I =4A, T =175C - 2.05 2.25 F J V =650V, T =25C - 0.7 25 R j Reverse current I mA R V =650V, T =175C - 5 R J (1) Q V =400V Total capacitive charge 9.3 nC C R V =1V, f=1MHz 118 R V =300V, f=1MHz Total capacitance C 16 pF R V =600V, f=1MHz 15 R Capacitance stored energy E V =400V 1.4 mJ C R (1) Q is independent on T , di /dt, and I as shown in the application note USCi AN0011. c j F F Thermal characteristics Value Parameter symbol Test Conditions Units Min Typ Max Thermal resistance, junction - case R 1.6 2.1 C/W qJC Typical Performance 8 25 - 55C - 55C 7 25C 25C 20 6 100C 100C 150C 150C 5 175C 15 175C 4 10 3 2 5 1 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 1 2 3 4 5 6 Forward Voltage, V (V) Forward Voltage, V (V) F F Figure 1 Typical forward characteristics Figure 2 Typical forward characteristics in surge current Rev. C, December 2018 2 For more information go to www.unitedsic.com. Forward Current, I (A) F Forward Current, I (A) F